Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyun-Eok Shin"'
Publikováno v:
Flat Panel Display Manufacturing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1c169ad41c3848f106b8bb673c09b9
https://doi.org/10.1002/9781119161387.ch11_01
https://doi.org/10.1002/9781119161387.ch11_01
Autor:
K.-W. Lee, Kang-Wook Park, Won Ji Park, Young-Jin Wee, S. W. Nam, H. K. Kang, Kang-Deog Suh, Young-Joon Moon, I.G. Kim, Jae-Chul Kim, Seungmoo Lee, Hyun-Eok Shin, J.W. Hwang
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
A manufacturable Cu/low-k multilevel interconnects have been integrated using HSQ-via-fill dual damascene process for 65nm node as stated in K.-W. Lee et al. (2003). By introducing non-porous type SiOC film (k=2.7) without trench etch stopper and cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f86d9fa2649cfe83611dd9446da0c3
https://doi.org/10.1109/iitc.2004.1345683
https://doi.org/10.1109/iitc.2004.1345683
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
A nonetchback intermetal dielectric (IMD) process using cage-type methyl silsesquioxane (MSQ) is demonstrated for 0.25 /spl mu/m LSI devices. The peeling problem of plasma enhanced TEOS (P-TEOS) SiO/sub 2/ on the MSQ during the chemical mechanical po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b37f436f0512e2f5ac98304a1a43f15
https://doi.org/10.1109/iitc.1999.787118
https://doi.org/10.1109/iitc.1999.787118
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
A multilevel interconnection technology using an HDP-CVD SiOF film is demonstrated for 0.25 /spl mu/m LSI devices. A stable HDP-SiOF film is realized as the intermetal dielectric (IMD). When HDP-SiOF has Si-F/sub 2/ bonds and silicon dangling bonds,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91a6468614e6cd9a504521a69934f0f9
https://doi.org/10.1109/iitc.1998.704795
https://doi.org/10.1109/iitc.1998.704795