Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hyun-Dong Song"'
Autor:
Hyunjoo Cha-Molstad, Ji Eun Yu, Zhiwei Feng, Su Hyun Lee, Jung Gi Kim, Peng Yang, Bitnara Han, Ki Woon Sung, Young Dong Yoo, Joonsung Hwang, Terry McGuire, Sang Mi Shim, Hyun Dong Song, Srinivasrao Ganipisetti, Nuozhou Wang, Jun Min Jang, Min Jae Lee, Seung Jun Kim, Kyung Ho Lee, Jin Tae Hong, Aaron Ciechanover, Inhee Mook-Jung, Kwang Pyo Kim, Xiang-Qun Xie, Yong Tae Kwon, Bo Yeon Kim
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-17 (2017)
Soluble misfolded proteins that fail to be degraded by the ubiquitin proteasome system (UPS) are redirected to autophagy via specific adaptors, such as p62. Here the authors show that p62 recognises N-degrons in these proteins, acting as a N-recognin
Externí odkaz:
https://doaj.org/article/a427518b7ba242ffb3606852a4c4bba9
Autor:
Yeong-Hun Park, Hyun-Dong Song, Ji-Woon Yang, Boram Yi, Hi-Deok Lee, Hyun-Jin Shin, Hyeong-Sub Song, Seung Hwan Kim, Ju-Hyun Shim
Publikováno v:
IEEE Transactions on Electron Devices. 68:4051-4056
Analytical models of low-frequency noise (LFN) characteristics for planar-type tunnel field-effect-transistors (TFETs) are proposed. A surface-potential-based current–voltage model is developed to physically represent the current fluctuation due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17c13668d3c4d6e3f0eb5b454196661
https://doi.org/10.1109/ted.2021.3087117
https://doi.org/10.1109/ted.2021.3087117
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4699-4703
In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f433b5a4c9d23195cdaec336f78ebd1e
https://doi.org/10.1166/jnn.2020.17796
https://doi.org/10.1166/jnn.2020.17796
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS).
The focus of this study was on the effect of channel orientation on tunneling field effect transistors (TFET). The proposed test patterns were rotated basic TFETs built on silicon on insulator substrates. The patterns were rotated in the (210) and (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d14cd852cc6b18882526e9bf5dc3baef
https://doi.org/10.1109/icmts48187.2020.9107915
https://doi.org/10.1109/icmts48187.2020.9107915
Publikováno v:
IRPS
The reduction of random telegraph noise (RTN) at the circuit level using common noise canceling methods, such as correlated double sampling (CDS), has proven difficult. Therefore, reduction of RTN at the device level is increasingly being investigate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140c19a2ef65b64e9a233cc9b497a86f
https://doi.org/10.1109/irps45951.2020.9129212
https://doi.org/10.1109/irps45951.2020.9129212
Autor:
Hyun-Dong Song, Hyuk-Min Kwon, Hi-Deok Lee, Hyun-Woong Choi, Sunil Babu Eadi, Seonghyun Kim, Hyun-Jin Shin, Do-Woo Kim, Hyeong-Sub Song
Publikováno v:
Japanese Journal of Applied Physics. 59:100903
The generation of interface traps at the drain corner during hot-carrier-stress (HCS) in a fully-depleted silicon-on-insulator tunneling field-effect transistor (TFET) was invested and correlated to low-frequency noise performance. The hot carrier da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0af6e175b863aec33ac977cdaeaa6d93
https://doi.org/10.35848/1347-4065/abb8f0
https://doi.org/10.35848/1347-4065/abb8f0
Autor:
Jae Woo Lee, Hyun-Jin Shin, Hyeong-Sub Song, Hi-Deok Lee, Sunil Babu Eadi, Hyun-Woong Choi, Ji-Woon Yang, Hyun-Dong Song
Publikováno v:
Japanese Journal of Applied Physics. 59:SMMB03
Many attempts have been made to improve the performance of tunneling field-effect transistors (TFETs). Among these, post metal annealing (PMA) can induce enhanced device performance, but its application to TFETs has not been sufficiently explored. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8c800ca2bde576872a8097fe496f9f
https://doi.org/10.35848/1347-4065/ab8e1c
https://doi.org/10.35848/1347-4065/ab8e1c
Publikováno v:
Microelectronic Engineering. 219:111153
In this study, effect of Ho interlayer was investigated in nickel silicide (NiSi)/Si junction for contact resistance reduction. A thin Holmium (Ho) interlayer was applied to Ni/(p/n)-Si contact to reduce contact resistance between NiSi and Si. Thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44cea627290df0925f588073e416d85
https://doi.org/10.1016/j.mee.2019.111153
https://doi.org/10.1016/j.mee.2019.111153
Autor:
Kyung Ho Lee, Min Jae Lee, Ki Woon Sung, Hyunjoo Cha-Molstad, Nuozhou Wang, Aaron Ciechanover, Yong Tae Kwon, Sang Mi Shim, Seung Jun Kim, Inhee Mook-Jung, Jun Min Jang, Terry McGuire, Kwang Pyo Kim, Bitnara Han, Xiang-Qun Xie, Peng Yang, Young Dong Yoo, Bo Yeon Kim, Joonsung Hwang, Ganipisetti Srinivasrao, Jin Tae Hong, Jung Gi Kim, Ji Eun Yu, Hyun Dong Song, Zhiwei Feng, Su Hyun Lee
Publikováno v:
NATURE COMMUNICATIONS(8)
Nature Communications, Vol 8, Iss 1, Pp 1-17 (2017)
Nature Communications
Nature Communications, Vol 8, Iss 1, Pp 1-17 (2017)
Nature Communications
Macroautophagy mediates the selective degradation of proteins and non-proteinaceous cellular constituents. Here, we show that the N-end rule pathway modulates macroautophagy. In this mechanism, the autophagic adapter p62/SQSTM1/Sequestosome-1 is an N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74c1df87add4855d6e4ed5c4785cebed
http://open-repository.kisti.re.kr/cube/handle/open_repository/482901.do
http://open-repository.kisti.re.kr/cube/handle/open_repository/482901.do
Publikováno v:
Coatings
Volume 9
Issue 6
Coatings, Vol 9, Iss 6, p 349 (2019)
Volume 9
Issue 6
Coatings, Vol 9, Iss 6, p 349 (2019)
In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::612f26dfb4e3ea6f3818a767c81c0a94
https://doi.org/10.3390/coatings9060349
https://doi.org/10.3390/coatings9060349