Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hyun-Don Song"'
Autor:
Ho-Sang Kwack, Hyun Soo Lim, Hyun-Don Song, Sung-Hoon Jung, Hyun Kyong Cho, Ho-Ki Kwon, Myeong Seok Oh
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022127-022127-5 (2012)
The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of texture formation and thickness of G
Externí odkaz:
https://doaj.org/article/f282522a601c45c7883a3ad59d7482e5
Autor:
Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ho-Ki Kwon, Chang-Hee Hong, S. Chandramohan, Ji Hye Kang, Hyun Don Song, Hyun Kyong Cho
Publikováno v:
Journal of Crystal Growth. 314:66-70
The effect of selective area growth (SAG) on wafer bowing of GaN-based light-emitting diodes (LEDs) is investigated. The SAG of LED structures was carried out on a silicon dioxide (SiO 2 ) mask pattern with periodic 1000×1000 μm openings, along the
Autor:
Hyun-Don Song, Young Jin Kim
Publikováno v:
Journal of the European Ceramic Society. 27:3745-3748
ZnO:Er thin films were deposited on c -plane sapphire substrates by rf magnetron sputtering and annealed at 700 °C under air and H 2 atmospheres for the luminescent improvement. The effects of sputtering parameters and the annealing conditions on vi
Autor:
Hyun Soo Lim, Hyun Kyong Cho, Sung Hoon Jung, Hyun-Don Song, Ho-Ki Kwon, Ho-Sang Kwack, Myeong Seok Oh
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022127-022127-5 (2012)
The light output power (LOP) of vertical-type GaN-based light emitting diodes (LED) with surface roughness (texture) can be changed by texture size, density, and thickness of GaN film or by the combined effects of texture formation and thickness of G
Autor:
Chang-Hee Hong, Hee Yun Kim, Periyayya Uthirakumar, Nam Han, Jae Hyoung Ryu, Hyun Kyu Kim, Eun Kyung Suh, Ji Hye Kang, Hyun Kyong Cho, Hyun Don Song, Ho-Ki Kwon, S. Chandramohan, Hyung Gu Kim
Publikováno v:
Japanese Journal of Applied Physics. 49:072102
In this paper we report on the selective area growth (SAG) of vertical GaN-based light-emitting diodes (LEDs) by low-pressure metal-organic chemical vapor deposition (MOCVD). SAG, under optimized growth conditions, leads to ridge-shaped epilayers wit
Autor:
Heon Lee, Ho Ki Kwon, Kyung Min Yoon, Jin Wook Lee, Eun Ju Hong, Kyeong Jae Byeon, Hyoungwon Park, Sun Kyung Kim, Hyun Kyong Cho, Hyun Don Song
Publikováno v:
Semiconductor Science and Technology. 25:035008
A vertical light-emitting diode (LED) with a chip size of 500 × 500 µm2 was fabricated by the laser lift-off (LLO) process of an InGaN-based blue LED wafer. After the LLO process, photonic crystal patterns by UV nano-imprint lithography were formed
Autor:
Sun Kyung Kim, Ho Seok Ee, Hyun Kyong Cho, Hong Gyu Park, Yong-Hee Lee, Hyun Don Song, Hyun Min Choi
Publikováno v:
Applied Physics Letters. 94:101102
We demonstrate light extraction from metal reflector-based AlGaInP photonic crystal (PhC) light-emitting diodes (LEDs). The photons reflected by a high-reflectivity, small-absorption, bottom Ag mirror steadily interact with the PhC, and thus enhanced
Publikováno v:
Korean Journal of Materials Research. 18:1~4-1~4
The phase transformations and luminescent properties of Eu-doped Ca Sr Al O phosphors were investigated. Ca Sr Al O :Eu phosphors were synthesized by a solid-state reaction with a flux, H BO . A phase transformation from monoclinic CaAl O to monoclin
Autor:
Hyun-Don Song, Young Jin Kim
Publikováno v:
Korean Journal of Materials Research. 16:401~407-401~407
Autor:
Hyun-Don Song, Young Jin Kim
Publikováno v:
Korean Journal of Materials Research. 16:58~62-58~62