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pro vyhledávání: '"Hyun-Chol Lim"'
Autor:
Il-Yong Park, Nam-Joo Kim, Kwang-Dong Yoo, Mi-Young Kim, Yong-Keon Choi, Chul-Jin Yoon, Lou N. Hutter, Hyun-Chol Lim
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A versatile 30V analog CMOS process in a 0.18 μm technology node has been developed by using cost-effective and modular fashion. To reduce the thermal budget deep NWELL isolation is formed after CMOS well formation. The drain-extended (DE) CMOS from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37cdae3a6499be5037bb1d450e20c116
https://doi.org/10.1109/ispsd.2011.5890830
https://doi.org/10.1109/ispsd.2011.5890830
Autor:
Yong-Keon Choi, Il-Yong Park, Hyun-Chol Lim, Mi-Young Kim, Chul-Jin Yoon, Nam-Joo Kim, Kwang-Dong Yoo, Hutter, L.N.
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p219-222, 4p