Zobrazeno 1 - 10
of 165
pro vyhledávání: '"Hyun Yong Yu"'
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract With development of information age, multi-valued logic (MVL) technology utilizing negative differential transconductance (NDT) phenomenon has drawn attention as next-generation computing technology that can replace binary logic. However, be
Externí odkaz:
https://doaj.org/article/86c8de4baa87489b80fff6ffc3cd64de
Autor:
Eunyoung Park, Hyun-Yong Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 752-759 (2024)
Recently, a new structure called PUC has been introduced, in which the periphery is located below the NAND cell to reduce chip area. However, as the SiN-based cell alloy process progresses during the NAND manufacturing process, there is a problem in
Externí odkaz:
https://doaj.org/article/d57beea389344f48beaf8ee6ddf4281f
Autor:
Kyu Hyun Han, Seung-Geun Kim, Seung-Hwan Kim, Jong-Hyun Kim, Seong-Hyun Hwang, Min-Su Kim, Sung-Joo Song, Hyun-Yong Yu
Publikováno v:
Materials Today Advances, Vol 21, Iss , Pp 100475- (2024)
Negative differential resistance (NDR) devices have recently attracted interest as multi-valued logic (MVL) circuits, owing to their folded electrical characteristics. However, with necessity of sophisticated computing systems, advanced NDR devices a
Externí odkaz:
https://doaj.org/article/93f829ce55234bb092f638cd50fc90e1
Autor:
Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu
Publikováno v:
Materials Today Advances, Vol 18, Iss , Pp 100367- (2023)
Two-dimensional (2D) atomic threshold switching field-effect transistors (ATS-FETs), which integrate 2D FET with threshold switching (TS) devices, have garnered attention as part of the subthreshold swing (SS) improvement for next-generation low-powe
Externí odkaz:
https://doaj.org/article/fbed0384022349f4aab50eed857959e3
Autor:
Min‐Su Kim, Euyjin Park, Seung‐Geun Kim, Jae‐Hyeun Park, Seung‐Hwan Kim, Kyu‐Hyun Han, Hyun‐Yong Yu
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 7, Pp n/a-n/a (2023)
Abstract Electrochemical metallization threshold switch (ECM TS) has received significant attention for various applications owing to its high ON/OFF ratio, fast switching characteristics, and simple active electrode/dielectric layer/inert electrode
Externí odkaz:
https://doaj.org/article/890ae48c6827489c956764f94cb6700b
Publikováno v:
IEEE Access, Vol 10, Pp 41112-41118 (2022)
For the first time, device design guidelines for a 3-nm node complementary field-effect transistor (CFET), which vertically stacks n-type and p-type nanosheet MOSFETs with a shared gate, are investigated using calibrated 3-D technology computer-aided
Externí odkaz:
https://doaj.org/article/9dfb2d635fff497a8d6075f084095fca
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 78-82 (2022)
For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET), which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to standard CMOS with nanosheet FETs in perspective of CMOS inverter performanc
Externí odkaz:
https://doaj.org/article/935180d87d9d4431acbff4cf8f7c26ba
Publikováno v:
Micro and Nano Systems Letters, Vol 9, Iss 1, Pp 1-7 (2021)
Abstract LC CMOS voltage-controlled oscillators (VCOs) with tunable inductors are essential for high-performance, multi-band communication systems, such as IoT applications and 5G communication. However, VCOs that use CMOS tunable inductors have diff
Externí odkaz:
https://doaj.org/article/76dbe3bc5e6047cf9704192049a65b48
Publikováno v:
IEEE Access, Vol 9, Pp 158116-158121 (2021)
For the first time, the electrothermal characteristics of a three-dimensional (3D) monolithic complementary FET (CFET) in DC operation as well as in AC CMOS operation were investigated with TCAD simulations. The self-heating effect (SHE) in a monolit
Externí odkaz:
https://doaj.org/article/d5536c5b43744717b7aae583d0e2e846
Publikováno v:
Advanced Science, Vol 8, Iss 12, Pp n/a-n/a (2021)
Abstract For next‐generation electronics and optoelectronics, 2D‐layered nanomaterial‐based field effect transistors (FETs) have garnered attention as promising candidates owing to their remarkable properties. However, their subthreshold swings
Externí odkaz:
https://doaj.org/article/5ca18e8d00774c56997d820a449d847d