Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hyun Yeol Rho"'
Autor:
Arindam Bala, Mayuri Sritharan, Na Liu, Muhammad Naqi, Anamika Sen, Gyuchull Han, Hyun Yeol Rho, Youngki Yoon, Sunkook Kim
Publikováno v:
InfoMat, Vol 6, Iss 4, Pp n/a-n/a (2024)
Abstract Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate senso
Externí odkaz:
https://doaj.org/article/f65570b4a4104bb8b4a6c9299c303e49
Autor:
Muhammad Naqi, Seong Cheol Jang, Yongin Cho, Ji Min Park, Joo On Oh, Hyun Yeol Rho, Hyun-Suk Kim, Sunkook Kim
Publikováno v:
Journal of Information Display, Vol 24, Iss 3, Pp 199-204 (2023)
Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications. In this work, we demonstrated a CMOS inverter construct
Externí odkaz:
https://doaj.org/article/33c391107b964483b41289d0fb407a3e
Autor:
Haewon Cho, Pavan Pujar, Minsu Choi, Muhammad Naqi, Yongin Cho, Hyun Yeol Rho, Jaichan Lee, Sunkook Kim
Publikováno v:
ACS Applied Materials & Interfaces. 13:60250-60260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77aba90a8b1a684ed6575a9e5d84d4a3
https://doi.org/10.1021/acsami.1c21387
https://doi.org/10.1021/acsami.1c21387
Autor:
Muhammad Naqi, Kyung Hwan Choi, Yongin Cho, Hyun Yeol Rho, Haewon Cho, Pavan Pujar, Na liu, Hyun‐Suk Kim, Jae‐Young Choi, Sunkook Kim
Publikováno v:
Advanced Electronic Materials. 8:2101331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1137cadc8a23baf28da19fe718a63f08
https://doi.org/10.1002/aelm.202101331
https://doi.org/10.1002/aelm.202101331
Autor:
Hyun Yeol Rho, Se Hyun Kim, Hwa Sung Lee, Sung Soo Han, So Hyun Park, Ji-Hoon Lee, Seolhee Baek, Tae Kyu An
Publikováno v:
Organic Electronics. 59:49-55
We report new organic-inorganic hybrid gate insulator materials containing solution-processable zinc diacrylate (ZnDA) and dipentaerythritol penta-/hexa-acrylate (DPHA) to fabricate high-performance and reliable organic thin film transistors (OTFTs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2041a845c1ff83887b91c799bba3dc6d
https://doi.org/10.1016/j.orgel.2018.04.043
https://doi.org/10.1016/j.orgel.2018.04.043