Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hyun Woo Tak"'
Autor:
Won Oh Lee, Ki Hyun Kim, Doo San Kim, You Jin Ji, Ji Eun Kang, Hyun Woo Tak, Jin Woo Park, Han Dock Song, Ki Seok Kim, Byeong Ok Cho, Young Lae Kim, Geun Young Yeom
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Precise and selective removal of silicon nitride (SiNx) over silicon oxide (SiOy) in a oxide/nitride stack is crucial for a current three dimensional NOT-AND type flash memory fabrication process. In this study, fast and selective isotropic
Externí odkaz:
https://doaj.org/article/d89a414ff0824370aad9a742a2808c8d
Publikováno v:
Science of Advanced Materials. 14:1258-1264
In this study, pulsed CF3I/C4F8/Ar/O2 inductively coupled plasmas have been studied for low-k etching, and the effects of CF3I addition to C4F8/Ar/O2 on the plasma characteristics and etch characteristics of low-k materials were investigated. The inc
Autor:
Jong Woo Hong, Yeon Hee Kim, Hee Ju Kim, Hyun Woo Tak, Soo Nam Goong, Seong Bae Kim, Ki Deok Bae, Jeong Yub Lee, Hae Soo Bae, Geun Young Yeom, Dong Woo Kim
Publikováno v:
Materials Science in Semiconductor Processing. 164:107617
Autor:
Jong Woo Hong, Yeon Hee Kim, Hee Ju Kim, Hyun Woo Tak, Ki Deok Bae, Jeong Yub Lee, Hae Soo Bae, Yong Su Kim, Geun Young Yeom
Publikováno v:
Vacuum. 212:111978
Autor:
Jong Woo Hong, Hyun Min Cho, Yu Gwang Jeong, Da Woon Jung, Yun Jong Yeo, Ji Eun Kang, Hee Ju Kim, Hyun Woo Tak, Geun Young Yeom, Dong Woo Kim
Publikováno v:
Materials Science in Semiconductor Processing. 160:107395
Publikováno v:
Materials Express. 10:834-840
Next generation semiconductor devices require ultra low dielectric constant (ULK) materials such as porous SiCOH on the back end of line structure for lower resistance and capacitance (RC) time delay, however, these ULK materials are easily damaged b
Publikováno v:
Materials Express. 10:903-908
In this study, the SiO2 etch characteristics of perfluorocarbon such as C4F8, C5F8, and C7F8 were investigated using inductively coupled plasmas (ICPs) to study the effect of a high C/F ratio on the etch characteristics of SiO2 for the ICP. The SiO2
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 33:302-309
In order to reduce the interconnect resistance and capacitance (RC) time delay of a semiconductor integrated circuit, a more porous dielectric material is used in recent interconnection for lower dielectric constant. However, it is difficult to use h
Autor:
Won Oh, Lee, Ki Hyun, Kim, Doo San, Kim, You Jin, Ji, Ji Eun, Kang, Hyun Woo, Tak, Jin Woo, Park, Han Dock, Song, Ki Seok, Kim, Byeong Ok, Cho, Young Lae, Kim, Geun Young, Yeom
Publikováno v:
Scientific reports. 12(1)
Precise and selective removal of silicon nitride (SiN
Autor:
Hyun Woo Tak, Hye Joo Lee, Long Wen, Byung Jin Kang, Dain Sung, Jeong Woon Bae, Dong Woo Kim, Wonseok Lee, Seung Bae Lee, Keunsuk Kim, Byeong Ok Cho, Young Lea Kim, Han Dock Song, Geun Young Yeom
Publikováno v:
Applied Surface Science. 600:154050