Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Hyun Soo Jung"'
Publikováno v:
Protected horticulture and Plant Factory. 29:252-258
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cdbe2b9e813faf967543580c821f086
https://doi.org/10.12791/ksbec.2020.29.3.252
https://doi.org/10.12791/ksbec.2020.29.3.252
Autor:
Hyun Soo Jung, Jin Suk Lee
Publikováno v:
Korean Journal of Child Studies. 41:1-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adccf4f81eccc4a1d1b762ee78cb0c00
https://doi.org/10.5723/kjcs.2020.41.1.1
https://doi.org/10.5723/kjcs.2020.41.1.1
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:6148-6151
The effect of a modified cell structure in the gate region on the electrical characteristics of three-dimensional (3D) NAND flash memory devices was investigated by using a technology computeraided design simulation. The interference in the memory de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e2b4137068bd54263d903758feee621
https://doi.org/10.1166/jnn.2019.17017
https://doi.org/10.1166/jnn.2019.17017
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-7 (2018)
Scientific Reports
Scientific Reports
One diode and one resistor (1D–1R) memristive devices based on inorganic Schottky diodes and poly(methylsilsesquioxane) (PMSSQ):graphene quantum dot (GQD) hybrid nanocomposites were fabricated to achieve stable memory characteristics. Current-volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63f44d4ef8137ee51bb413539168553e
http://link.springer.com/article/10.1038/s41598-018-30538-y
http://link.springer.com/article/10.1038/s41598-018-30538-y
Publikováno v:
Protected horticulture and Plant Factory. 27:245-252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2b0ddb1aac00d13184e33e05fe93e5
https://doi.org/10.12791/ksbec.2018.27.3.245
https://doi.org/10.12791/ksbec.2018.27.3.245
Autor:
Hyun-Soo Jung
Publikováno v:
OUGHTOPIA. 32:105-138
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb479396f3630844f66b87fd48b812b7
https://doi.org/10.32355/oughtopia.2017.11.32.2.105
https://doi.org/10.32355/oughtopia.2017.11.32.2.105
Publikováno v:
IEEE Electron Device Letters. 38:1375-1378
The effects of taper angle of the string and the number of layers on the electrical characteristics of vertical NAND flash memories are investigated. Simulation results show that the transconductance and the threshold voltage distribution over the po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b785ac49ee6b17543a5a3ca40dbf48
https://doi.org/10.1109/led.2017.2747631
https://doi.org/10.1109/led.2017.2747631
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:1587-1591
The switching mechanisms of resistive random access memories (ReRAMs) were strongly related to the formation and rupture of conduction filaments (CFs) in the transition metal oxide (TMO) layer. The novel method approached to enhance the electrical ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba9582d6963128d9cc714e8b45777db3
https://doi.org/10.1166/jnn.2016.11951
https://doi.org/10.1166/jnn.2016.11951
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:8215-8218
The electrical characteristics of MOSFETs with a high-k dielectric layer were simulated by using a full three-dimensional technology computer-aided design simulator. The MOSFETs leakage current increased when their size decreased. The mobility variat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03dc29ba6223932dc9e01052e55ae570
https://doi.org/10.1166/jnn.2014.9896
https://doi.org/10.1166/jnn.2014.9896
Publikováno v:
Korean Journal of Security Convergence Management. 3:39-55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a01a4c39f920b1ebc4b53ac06c1be8bf
https://doi.org/10.24826/kosscom.3.1.3
https://doi.org/10.24826/kosscom.3.1.3