Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Hyun Jun Jeong"'
Publikováno v:
Journal of Information Display, Vol 25, Iss 3, Pp 295-303 (2024)
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important
Externí odkaz:
https://doaj.org/article/c60b76b489494750a871d21e03977df0
Publikováno v:
Modelling and Simulation in Engineering, Vol 2012 (2012)
We present two-dimensional numerical simulations of the impact and spreading of a droplet containing a number of small particles on a flat solid surface, just after hitting the solid surface, to understand particle effects on spreading dynamics of a
Externí odkaz:
https://doaj.org/article/9d3c1d7cf92140fb9b2c06a21e2da32e
Publikováno v:
IEEE Electron Device Letters. 44:650-653
Autor:
Hyun Jun Jeong, Jun Kim
Publikováno v:
Korean Society For The Study Of Physical Education. 27:143-160
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimizati
Externí odkaz:
https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1047-1050
Autor:
Hyun‐Jun Jeong, Jin‐Seong Park
Publikováno v:
Amorphous Oxide Semiconductors. :213-237
Publikováno v:
ACS Applied Electronic Materials. 4:1343-1350
Publikováno v:
Journal of Materials Chemistry C. 10:7831-7838
Vertically nano-laminated InOx and GaZnOy semiconductors exhibited excellent controllability of electron carriers in TFTs via PEALD methods.
Publikováno v:
ACS Applied Electronic Materials. 3:3530-3537