Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Hyun Jun Jeong"'
Publikováno v:
Journal of Information Display, Vol 25, Iss 3, Pp 295-303 (2024)
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important
Externí odkaz:
https://doaj.org/article/c60b76b489494750a871d21e03977df0
Publikováno v:
IEEE Electron Device Letters. 44:650-653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e127556270b22fc02c90b31a6b636934
https://doi.org/10.1109/led.2023.3250439
https://doi.org/10.1109/led.2023.3250439
Autor:
Hyun Jun Jeong, Jun Kim
Publikováno v:
Korean Society For The Study Of Physical Education. 27:143-160
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd08bf363a7e65b942f6dcdddb69fdfd
https://doi.org/10.15831/jksspe.2022.27.5.143
https://doi.org/10.15831/jksspe.2022.27.5.143
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimizati
Externí odkaz:
https://doaj.org/article/d8eedc00bdd94e3391f042da103c958d
Publikováno v:
SID Symposium Digest of Technical Papers. 53:1047-1050
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7798d9eb644ef901b1d6381c9c32711f
https://doi.org/10.1002/sdtp.15678
https://doi.org/10.1002/sdtp.15678
Autor:
Hyun‐Jun Jeong, Jin‐Seong Park
Publikováno v:
Amorphous Oxide Semiconductors. :213-237
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7635262c6ae3644f549b2efc7130599f
https://doi.org/10.1002/9781119715641.ch10
https://doi.org/10.1002/9781119715641.ch10
Publikováno v:
ACS Applied Electronic Materials. 4:1343-1350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::077dad5de44a6324258927e2fa7148d3
https://doi.org/10.1021/acsaelm.2c00079
https://doi.org/10.1021/acsaelm.2c00079
Publikováno v:
Journal of Materials Chemistry C. 10:7831-7838
Vertically nano-laminated InOx and GaZnOy semiconductors exhibited excellent controllability of electron carriers in TFTs via PEALD methods.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b36e35d03aa7e644ecbd43fa11c4890
https://doi.org/10.1039/d1tc06050c
https://doi.org/10.1039/d1tc06050c
Publikováno v:
ACS Applied Electronic Materials. 3:3530-3537
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5c7d3c86de046f118ace43b84c8a65
https://doi.org/10.1021/acsaelm.1c00463
https://doi.org/10.1021/acsaelm.1c00463
Publikováno v:
ACS Applied Materials & Interfaces. 13:28493-28502
Atomic layer deposition (ALD) is a promising deposition method to precisely control the thickness and metal composition of oxide semiconductors, making them attractive materials for use in thin-film transistors because of their high mobility and stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4b8a79015308c35ded78b9282d00251
https://doi.org/10.1021/acsami.1c06575
https://doi.org/10.1021/acsami.1c06575