Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Hyun Jun Bae"'
Publikováno v:
Vietnam Journal of Mechanics. 44:474-489
This paper presents the approach of building a mathematical model for a parallel robotic manipulator with flexible links and elastic joints. The links to the base are assumed to be rigid bodies, and the thin connecting rods are assumed to be flexible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96dab6179022e93223422d1e5460fc30
https://doi.org/10.15625/0866-7136/17944
https://doi.org/10.15625/0866-7136/17944
Autor:
Donggun Park, Chang Woo Oh, Won-Seong Lee, Sung Hwan Kim, Kyungseok Oh, Dong-Won Kim, Yong Lack Choi, Ho Ju Song, Sung In Hong, Hyun Jun Bae
Publikováno v:
2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial.
Ultra Thin Body Si-On-ONO (UTB SOONO) transistors with ultra thin spacer are successfully demonstrated and evaluated. They have shown increased driving current more than 30% compared with conventional UTB SOONO transistors with thick spacer due to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ba5f3928b913372adce88025bd58af3
https://doi.org/10.1109/icicdt.2008.4567233
https://doi.org/10.1109/icicdt.2008.4567233
Autor:
Yong Lack Choi, Ho Ju Song, Dong-Won Kim, Sung In Hong, Donggun Park, Eun Jung Yun, Na-Young Kim, Hyun Jun Bae, Chang Woo Oh, Sung Hwan Kim
Publikováno v:
2007 IEEE International SOI Conference.
In this study, we compared sensing margin according to the back gate bias and body doping concentration. We achieved large sensing margin of 62 uA/um at LG = 87 run and demonstrated sensing margin of 45 uA/um with LG = 47 nm that is the smallest devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584d312eafb964ef6906f3b17fcef0b3
https://doi.org/10.1109/soi.2007.4357873
https://doi.org/10.1109/soi.2007.4357873
Autor:
Na-Young Kim, Donggun Park, Yong Lack Choi, Chang Woo Oh, Sung Hwan Kim, Hyun Jun Bae, Ho Ju Song, Byung-Il Ryu, Sung In Hong, Dong-Won Kim, Yong-seok Lee, Dong-uk Choi
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
We completed the demonstration of three key functions of SOONO devices by demonstrating the DRAM characteristics of FD and PD SOONO devices successfully, together with the previously reported logic transistor and flash memory characteristics. Floatin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd27d416b40a72194e4708432b3c6650
https://doi.org/10.1109/vlsit.2007.4339769
https://doi.org/10.1109/vlsit.2007.4339769
Autor:
Donggun Park, Sung Hwan Kim, Byung-Il Ryu, Dong-Won Kim, Heungsik Park, Im Soo Park, Je Bum Yoon, S. J. Hong, Na-Young Kim, Yong Lack Choi, Chang Woo Oh, Hyun Jun Bae, Sung-Han Kim
Publikováno v:
2006 International Electron Devices Meeting.
In this article, we proposed and successfully demonstrated 25 nm TiN metal gate nanorod transistors with laterally and vertically scaled actives without process burdens. They showed the excellent short channel effect immunity and high current drivabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a152d94aa6d9d00d7eb5ade7f5e6e3
https://doi.org/10.1109/iedm.2006.346927
https://doi.org/10.1109/iedm.2006.346927
Autor:
Hyun Jun Bae, Chang Woo Oh, Jin Bum Kim, Nam Myun Cho, Yong Seok Lee, Kong Soo Lee, Donggun Park, Byung-Il Ryu, Na-Young Kim, Yong Lack Choi, Sung In Hong, Dong-Won Kim, Sung Hwan Kim
Publikováno v:
2006 International Electron Devices Meeting.
In this article, we report improved results of 4-bit double SONOS memories (DSMs) with 4-storage nodes through the optimization of ONO layer thicknesses for front and back sides. They show more balanced characteristics between the front and back chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c77b3079efb1caf786193d554c4380
https://doi.org/10.1109/iedm.2006.346947
https://doi.org/10.1109/iedm.2006.346947
Autor:
Yong Lack Choi, Chang Woo Oh, Sung In Hong, Na-Young Kim, Dong-Won Kim, Donggun Park, Hyun Jun Bae, Sung Hwan Kim
Publikováno v:
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.
We proposed and successfully demonstrated Si-on-ONO (SOONO) devices for fully depleted SOI transistor and 4 bit flash memory applications. In terms of HP transistor, SOONO MOSFETs showed good SCE immunity and high driving currents. In terms of a 4-bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58ee3b6a3e8d97c078c21f2548c91065
https://doi.org/10.1109/icsict.2006.306481
https://doi.org/10.1109/icsict.2006.306481
Autor:
Sung Hwan Kim, Hyun Jun Bae, Chang Woo Oh, Dong-Won Kim, Satoru Yamada, Gyoyoung Jin, Yonghan Roh
Publikováno v:
Japanese Journal of Applied Physics. 51:04DC04
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421bb5e83028f6c93a420435045e6f22
https://doi.org/10.7567/jjap.51.04dc04
https://doi.org/10.7567/jjap.51.04dc04
Autor:
Hyun Jun Bae, Sung Hwan Kim, Sung In Hong, Yong Lack Choi, Ho Ju Song, Chang Woo Oh, Dong-Won Kim, Donggun Park, KyungSeok Oh, Won-Seong Lee
Publikováno v:
2008 IEEE International Conference on Integrated Circuit Design & Technology & Tutorial; 2008, p5-8, 4p
Autor:
Chang Woo Oh, Na Young Kim, Sung Hwan Kim, Yong Lack Choi, Sung In Hong, Hyun Jun Bae, Jin Bum Kim, Kong Soo Lee, Yong Seok Lee, Nam Myun Cho, Dong-Won Kim, Donggun Park, Byung-Il Ryu
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p