Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Hyun Jun Ahn"'
Autor:
Tae In Lee, Byung Jin Cho, Min Ju Kim, Hyun Jun Ahn, Rino Choi, Eui Joong Shin, Wan Sik Hwang, Hyun-Young Yu, Manh-Cuong Nguyen
Publikováno v:
IEEE Electron Device Letters. 40:1350-1353
We report on the impact of H2 high pressure annealing (H2-HPA) on a Y-doped ZrO2 (Y-ZrO2)/GeOx/Ge gate stack. In this paper, compared to conventional forming gas annealing (FGA), the H2-HPA increased the k-value of the Y-doped ZrO2 gate dielectric to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34a18872eefd58145ebd5e1ae6915ab3
https://doi.org/10.1109/led.2019.2928026
https://doi.org/10.1109/led.2019.2928026
Autor:
Eui Joong Shin, Sung Won Shin, Seung Hwan Lee, Byung Jin Cho, Wan Sik Hwang, Hyun Jun Ahn, Hyun Yong Yu, Tae In Lee, Min Ju Kim
Publikováno v:
IEEE Electron Device Letters. 40:502-505
An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e72e67cb8b956adc37da169ca13b8559
https://doi.org/10.1109/led.2019.2899139
https://doi.org/10.1109/led.2019.2899139
Publikováno v:
Microwave and Optical Technology Letters. 61:878-882
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a45b491878a2f4071aa9bb67d9d45d1e
https://doi.org/10.1002/mop.31669
https://doi.org/10.1002/mop.31669
Publikováno v:
IEEE Transactions on Electron Devices. 66:378-382
The fluorine (F) effect originating from the chemical vapor deposited (CVD) tungsten (W) process on charge-trap flash memory devices was systematically investigated, and the CVD-W memory was compared with physical vapor deposited (PVD) W memory. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f62e82575396c33b36db25b523fd7ceb
https://doi.org/10.1109/ted.2018.2873693
https://doi.org/10.1109/ted.2018.2873693
Autor:
Tae In Lee, Eui Joong Shin, Byung Jin Cho, Jae Hwan Kim, Hyun Jun Ahn, Wan Sik Hwang, Seung Hwan Lee, Jae-Duk Lee, Sung Won Shin, Min Ju Kim
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate for the first time that the use of an anti-ferroelectric film for the blocking layer of a charge trap flash (CTF) device significantly improves memory performance. The CTF device with the anti-ferroelectric blocking layer shows a large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7992f184a6767d769259c3e0c860225f
https://doi.org/10.1109/iedm13553.2020.9371984
https://doi.org/10.1109/iedm13553.2020.9371984
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 18:255-261
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5620f3c39c9f8f430c0c397329a11ce
https://doi.org/10.5573/jsts.2018.18.2.255
https://doi.org/10.5573/jsts.2018.18.2.255
Autor:
Wan Sik Hwang, Hyun Yong Yu, Jungmin Moon, Tae In Lee, Byung Jin Cho, Yujin Seo, Hyun Jun Ahn
Publikováno v:
IEEE Transactions on Electron Devices. 64:4242-4245
A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n–Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4acc696872e3a0621f9a3a2ae054bf1
https://doi.org/10.1109/ted.2017.2736163
https://doi.org/10.1109/ted.2017.2736163
Autor:
Byung Jin Cho, Yujin Seo, Tae In Lee, Hyun Jun Ahn, Choong-Ki Kim, Jungmin Moon, Wan Sik Hwang, Hyun Yong Yu
Publikováno v:
IEEE Transactions on Electron Devices. 64:2599-2603
Nickel germanide (NiGe) was formed from atomic layer deposition (ALD) Ni on Ge and a subequent annealing process; the Ni film with low resistivity ( $34~\mu \Omega \cdot \text {cm}$ ) at 15 nm was obtained by N2 + H2 plasma treatment after Ni precurs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69268c6011cd445b5bb43248d2f80f7b
https://doi.org/10.1109/ted.2017.2694456
https://doi.org/10.1109/ted.2017.2694456
Autor:
Hyun Jun Ahn, Byung Jin Cho, Wan Sik Hwang, Yujin Seo, Hyun-Young Yu, Tae In Lee, Jungmin Moon
Publikováno v:
Solid-State Electronics. 130:57-62
The use of a GeO 2 interfacial layer (IL) between a high-k dielectric and a Ge substrate helps to reduce the interface state density in Ge MOS devices. We report that the presence of the GeO 2 IL changes the effective work function (eWF) of the gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ccb22d749c0fefc0e529b894f47167
https://doi.org/10.1016/j.sse.2017.01.011
https://doi.org/10.1016/j.sse.2017.01.011
Autor:
Il Cheol Rho, Byung Jin Cho, Wan Sik Hwang, Jungmin Moon, Yujin Seo, Hyun Jun Ahn, Choon Hwan Kim, Choong-Ki Kim, Sungho Koh
Publikováno v:
IEEE Transactions on Electron Devices. 63:2858-2863
Erbium carbide (ErC2) prepared by atomic layer deposition (ALD) is successfully demonstrated for the first time as a novel work function (WF) metal for nMOSFET applications. The prepared ErC2 shows a very low effective WF (eWF), as low as 3.9 eV on H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e235627b22cdd51657db31bc66f5c1f6
https://doi.org/10.1109/ted.2016.2570221
https://doi.org/10.1109/ted.2016.2570221