Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hyun Gwan Kim"'
Autor:
Chan-mo Kang, Kyu-Ha Baek, Changhee Lee, Lee-Mi Do, Hyoung Jin Choi, Man-Young Park, Hyunsik Chae, Hyun-Gwan Kim, Hyeonwoo Shin
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:2632-2636
Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d81372735060cd51a641a0658a0a167c
https://doi.org/10.1166/jnn.2016.11080
https://doi.org/10.1166/jnn.2016.11080
Publikováno v:
Journal of Materials Chemistry C. 4:10486-10493
A facile route for the preparation of a solution-processed silicon oxide dielectric from perhydropolysilazane (PHPS) at a low temperature (≤150 °C) is proposed. Deep ultraviolet (DUV) irradiation on the PHPS-derived silicon oxide film, where the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45279deabab2cfb5d41a28636601c414
https://doi.org/10.1039/c6tc03725a
https://doi.org/10.1039/c6tc03725a
Autor:
Hyeonwoo, Shin, Chan-Mo, Kang, Hyunsik, Chae, Hyun-Gwan, Kim, Kyu-Ha, Baek, Hyoung Jin, Choi, Man-Young, Park, Lee-Mi, Do, Changhee, Lee
Publikováno v:
Journal of nanoscience and nanotechnology. 16(3)
Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c0fc9c01921663b80db3f0f6165f9455
https://pubmed.ncbi.nlm.nih.gov/27455680
https://pubmed.ncbi.nlm.nih.gov/27455680
Autor:
Christopher Pearson, Michael C. Petty, Hongdoo Kim, Yesul Jeong, Hyun-Gwan Kim, Lee-Mi Do, Man-Young Park
Publikováno v:
ACS applied materials & interfaces, 2016, Vol.8(3), pp.2061-2070 [Peer Reviewed Journal]
We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::695862bc23604e7d6c080b4e5bf5d839
https://pubmed.ncbi.nlm.nih.gov/26704352
https://pubmed.ncbi.nlm.nih.gov/26704352
Autor:
Christopher Pearson, Lee-Mi Do, Michael C. Petty, Hyun-Gwan Kim, Man-Young Park, Yesul Jeong, Hongdoo Kim
Publikováno v:
RSC advances, 2015, Vol.5(45), pp.36083-36087 [Peer Reviewed Journal]
We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1bbf0eed588d8cd14833de2cf77c761c
Autor:
Byeong Geun Son, So Yeon Je, Man Young Park, Rino Choi, Hyun Gwan Kim, Lee Mi Do, Jae Kyeong Jeong
Publikováno v:
ACS applied materialsinterfaces. 6(21)
Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (300 °C) required to achieve a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef8201e925528b6a0e4600b3663dd6fc
https://pubmed.ncbi.nlm.nih.gov/25285585
https://pubmed.ncbi.nlm.nih.gov/25285585