Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Hyun Choe"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
In Applied Surface Science 15 March 2023 613
Autor:
Taehwan Moon, Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J Joshua Yang, Jinseong Heo
Publikováno v:
Neuromorphic Computing and Engineering, Vol 3, Iss 2, p 024001 (2023)
We propose a novel synaptic design of more efficient neuromorphic edge-computing with substantially improved linearity and extremely low variability. Specifically, a parallel arrangement of ferroelectric tunnel junctions (FTJ) with an incremental pul
Externí odkaz:
https://doaj.org/article/db5675976ec94bde8fc43525d5ede6de
Autor:
Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversa
Externí odkaz:
https://doaj.org/article/0aa0200a81034578b05965a772f1e877
Autor:
Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee, Jinseong Heo
Publikováno v:
Nature Electronics. 6:390-397
Autor:
Ho Jae Shim, Jin Seok Kim, Da Won Ahn, Jin Hyun Choe, Eunsu Jung, Donghyuk Oh, Kyung Soo Kim, Sung Chul Lee, Sung Gyu Pyo
Publikováno v:
Electronic Materials Letters. 18:321-329
Publikováno v:
Electronic Materials Letters.
Publikováno v:
Electronic Materials Letters.
Autor:
Hagyoul Bae, Jinseong Heo, Sung-Hyun Kim, Sanghyun Jo, Yunseong Lee, Duk-Hyun Choe, Taehwan Moon, Seung-Geol Nam
Publikováno v:
Materials Today. 50:8-15
Fluorite-structure ferroelectrics — in particular the orthorhombic phase of HfO2 — are of paramount interest to academia and industry because they show unprecedented scalability down to 1-nm-thick size and are compatible with Si electronics. Howe
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-