Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hyun‐Soo Ra"'
Publikováno v:
Advanced Science, Vol 7, Iss 19, Pp n/a-n/a (2020)
Abstract Heterojunction structures using 2D materials are promising building blocks for electronic and optoelectronic devices. The limitations of conventional silicon photodetectors and energy devices are able to be overcome by exploiting quantum tun
Externí odkaz:
https://doaj.org/article/6eae9c68f1524ae09109be3573796f7b
Autor:
Do Kyung Hwang, Young Tack Lee, Jisu Jang, Jongtae Ahn, Jae Won Shim, Tae Wook Kim, Takashi Taniguchi, Kenji Watanabe, Hyun-Soo Ra
Publikováno v:
ACS Applied Materials & Interfaces. 13:7470-7475
Two-dimensional transition metal dichalcogenide semiconductors are very promising candidates for future electronic applications with low power consumption due to a low leakage current and high on-off current ratio. In this study, we suggest a complem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83007a892506f3a415b3340c0161c84b
https://doi.org/10.1021/acsami.0c21222
https://doi.org/10.1021/acsami.0c21222
Autor:
Jisu, Jang, Hyun-Soo, Ra, Jongtae, Ahn, Tae Wook, Kim, Seung Ho, Song, Soohyung, Park, Takashi, Taniguch, Kenji, Watanabe, Kimoon, Lee, Do Kyung, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(19)
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal-oxide-semiconductor circuits. However, the polarity control of 2D transistors remains a challenge because of the lack of a high-work-funct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fe13bdb19ea9270aeeb660cb02cb9793
https://pubmed.ncbi.nlm.nih.gov/35306686
https://pubmed.ncbi.nlm.nih.gov/35306686
Autor:
Min-Hye, Jeong, Hyun-Soo, Ra, Sang-Hyeon, Lee, Do-Hyun, Kwak, Jongtae, Ahn, Won Seok, Yun, JaeDong, Lee, Weon-Sik, Chae, Do Kyung, Hwang, Jong-Soo, Lee
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(8)
While 2D transition metal dichalcogenides (TMDs) are promising building blocks for various optoelectronic applications, limitations remain for multilayered TMD-based photodetectors: an indirect bandgap and a short carrier lifetime by strongly bound e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::32975e729c0e1260c5c3a8e424383f14
https://pubmed.ncbi.nlm.nih.gov/35019191
https://pubmed.ncbi.nlm.nih.gov/35019191
Autor:
Byeong Kwon Ju, Seongil Im, Kyul Ko, Min-Chul Park, Daeyeon Kim, Namhee Kwon, Soohyung Park, Jongtae Ahn, Ji Hoon Kang, Ting-Chung Poon, Jihoon Kyhm, Hyun-Soo Ra, Do Kyung Hwang, Sungjae Hong, Jisu Jang, Tae-Wook Kim, Heesun Bae, Sung-Won Choi
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb8c32d00407f68289becfcb07c98bbd
https://hdl.handle.net/10919/108360
https://hdl.handle.net/10919/108360
Autor:
Hyun‐Soo Ra, Jongtae Ahn, Jisu Jang, Tae Wook Kim, Seung Ho Song, Min‐Hye Jeong, Sang‐Hyeon Lee, Taegeun Yoon, Tea Woong Yoon, Seungsoo Kim, Takashi Taniguch, Kenji Watanabe, Young Jae Song, Jong‐Soo Lee, Do Kyung Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(7)
The probing of fundamental photophysics is a key prerequisite for the construction of diverse optoelectronic devices and circuits. To date, though, photocarrier dynamics in 2D materials remains unclear, plagued primarily by two issues: a large excito
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::991e445c5d3b64b3e8b25c0506da6299
https://pubmed.ncbi.nlm.nih.gov/34865265
https://pubmed.ncbi.nlm.nih.gov/34865265
Autor:
Jongtae, Ahn, Kyul, Ko, Ji-Hoon, Kyhm, Hyun-Soo, Ra, Heesun, Bae, Sungjae, Hong, Dae-Yeon, Kim, Jisu, Jang, Tae Wook, Kim, Sungwon, Choi, Ji-Hoon, Kang, Namhee, Kwon, Soohyung, Park, Byeong-Kwon, Ju, Ting-Chung, Poon, Min-Chul, Park, Seongil, Im, Do Kyung, Hwang
Publikováno v:
ACS nano. 15(11)
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::76d22fc3728c595cd432f596d5396117
https://pubmed.ncbi.nlm.nih.gov/34677045
https://pubmed.ncbi.nlm.nih.gov/34677045
Autor:
Jisu Jang, Do Kyung Hwang, Takashi Taniguchi, Seung Ho Song, Tae-Wook Kim, Kenji Watanabe, Soohyung Park, Hyun-Soo Ra, Kimoon Lee, Jongtae Ahn
Precise control over the polarity of transistors is a key necessity for the construction of complementary metal–oxide–semiconductor circuits. However, the polarity control of two-dimensional (2D) transistors remains a challenge because of Fermi-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::354b0ff203e05c10e5cbedf693f87e4f
https://doi.org/10.21203/rs.3.rs-514895/v1
https://doi.org/10.21203/rs.3.rs-514895/v1
Autor:
Min‐Hye Jeong, Hyun‐Soo Ra, Sang‐Hyeon Lee, Do‐Hyun Kwak, Jongtae Ahn, Won Seok Yun, JaeDong Lee, Weon‐Sik Chae, Do Kyung Hwang, Jong‐Soo Lee
Publikováno v:
Advanced Materials. 34:2108412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9802a6f9d03c79de5f514fd49fbe2e28
https://doi.org/10.1002/adma.202108412
https://doi.org/10.1002/adma.202108412
Autor:
A-Young Lee, Yeon-Su Kang, Hyun-Soo Ra, Do-Hyun Kwak, Min-Hye Jeong, Jong-Soo Lee, Weon-Sik Chae, Jeong-Hyun Park
Publikováno v:
ACS Applied Materials & Interfaces. 10:16033-16040
Recently, black phosphorus (BP) with direct band gap exhibited excellent potential for optoelectronic applications because of its high charge carrier mobility and low dark current as well as the variable band gap of 0.3-1.5 eV depending on the number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e752baf724a9b161027236f0891e5f36
https://doi.org/10.1021/acsami.8b03285
https://doi.org/10.1021/acsami.8b03285