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Realization of CMOS operation in 3-dimensional stacked FET with self-aligned direct backside contact

Autor: Park, Juhun, Park, Jaehyun, Park, Jejune, Hwang, Kyuman, Yun, Jinchan, Kim, Dahye, Park, Sungil, Yang, Jinwook, Jeong, Jae Won, Yun, Chuljin, Bae, Jinho, Huh, Daihong, Yeon, Deukho, Kim, Sanghyeon, Baek, Seungeun, Son, Soomin, Lee, Junghan, Kim, Tae-Sun, Lee, Seungjun, Lee, Sun-Jung, Park, Sang Wuk, Kuh, Bong Jin, Ha, Daewon, Hyun, Sangjin, Ahn, Su Jin, Song, Jaihyuk

Publikováno v: Japanese Journal of Applied Physics; December 2024, Vol. 63 Issue: 12 p120803-120803, 1p

Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells.

Autor: Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub

Publikováno v: IEEE Transactions on Electron Devices; Jan2019, Vol. 66 Issue 1, p389-394, 6p

Modulation of the Schottky barrier height for advanced contact schemes.

Autor: Menghini, Mariela A., Homm, Pia, Su, Chen-Yi, Kittl, Jorge A., Tomita, Ryuji, Hegde, Ganesh, Lee, Joon-Gon, Hyun, Sangjin, Bowen, Chris, Rodder, Mark. S., Afanas'ev, Valeri, Locquet, Jean-Pierre

Publikováno v: 2015 IEEE International Interconnect Technology Conference & 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM); 2015, p39-42, 4p

Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

Autor: Loo, Roger, Verheyen, Peter, Rooyackers, Rita, Walczyk, Christian, Leys, Frederik, Shamiryan, Denis, Absil, Philip, Delande, Tinne, Moussa, Alain, Weijtmans, Hans, Wise, Rick, Machkaoutsan, Vladimir, Arena, Chantal, McCormack, John, Passefort, Sophie, Sorada, Haruyuki, Inoue, Akira, Chan, Byeong, Hyun, Sangjin, Jakschik, Stefan, Caymax, Matty R., Eneman, Geert, Bender, Hugo, Drijbooms, Chris, Geenen, Luc, Tomasini, Pierre, Godny, Stephane

Publikováno v: ECS Transactions; October 2006, Vol. 3 Issue: 7 p453-465, 13p