Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hyuk-Ju Ryu"'
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a number of case studies in which various methods and tools are used to localize resistive open defects, including two-terminal IV, two-terminal electron-beam absorbed current (EBAC), electron beam induced resistance change (EBIRC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f17eb134cd0e15ae14b3873e837a956
https://doi.org/10.31399/asm.cp.istfa2021p0241
https://doi.org/10.31399/asm.cp.istfa2021p0241
Autor:
May Ling Oh, Shuai Zhao, Jennifer Huening, Joshua D Foster, Hyuk Ju Ryu, Swaran Kumar, Charles W Ladwig, Wen-hsien Chuang, Di Xu, Chia-Yi Chen, Lacey Badger, Tom Tong
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the 3D stack-die technology, top die and base die are stacked together with micro-bumps for die-to-die interconnection and a through silicon via (TSV) for die-to-package connection. This technology provides tremendous flexibility as designers se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2907685e1cf09efb127ac6e049b0138
https://doi.org/10.31399/asm.cp.istfa2020p0001
https://doi.org/10.31399/asm.cp.istfa2020p0001
Autor:
Prasoon Joshi, Tom Tong, Shuai Zhao, Di Xu, Wen-hsien Chuang, May Ling Oh, Hyuk Ju Ryu, Jennifer Huening
Publikováno v:
International Symposium for Testing and Failure Analysis.
On older semiconductor technology, electron-beam probing (EBP) for active voltage contrast and waveform on frontside metal lines was widely utilized. EBP is also being extended to include the well-known optical techniques such as signal mapping imagi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1ccdf32187938f61801c260c2f01f8
https://doi.org/10.31399/asm.cp.istfa2020p0100
https://doi.org/10.31399/asm.cp.istfa2020p0100
Autor:
Yunfei Wang, Prasoon Joshi, Wen-hsien Chuang, Di Xu, Ma Zhiyong, Steven R. Cook, Shuai Zhao, Piyush Vivek Deshpande, Jennifer Huening, Hyuk Ju Ryu, Xianghong Tom Tong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5226f0f86b4b685beb093ab2814dc286
https://doi.org/10.31399/asm.tb.mfadr7.t91110323
https://doi.org/10.31399/asm.tb.mfadr7.t91110323
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper shows for the first time chip level electron beam probing on fully functional 10nm and 14nm node FinFET chips with sub-fin level resolution using techniques developed in house. Three novel electron beam probing techniques were developed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea869fb8d901e5eec9bd8285ef9da72
https://doi.org/10.31399/asm.cp.istfa2018p0345
https://doi.org/10.31399/asm.cp.istfa2018p0345
Autor:
Mark A. Eriksson, Deborah M. Paskiewicz, Hyuk Ju Ryu, Donald E. Savage, Christoph Deneke, Stefan Baunack, Oliver G. Schmidt, Shelley A. Scott, Angelo Malachias, Max G. Lagally
Publikováno v:
ACS applied materialsinterfaces. 9(48)
Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9ea0cadcf7057586cfa1452f11c5bdc
https://pubmed.ncbi.nlm.nih.gov/29129058
https://pubmed.ncbi.nlm.nih.gov/29129058
Publikováno v:
ECS Transactions. 16:983-988
We present both experimental results and a compact model on nanoscale thermal transport in the vicinity of a hot spot in silicon. Effective-local-temperature measurements on the nanoscale are influenced by localized heating effect and a thermal inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8041b08938ea712710d38e4702d2f1ef
https://doi.org/10.1149/1.2986860
https://doi.org/10.1149/1.2986860
Autor:
Tom Tong, Christopher S. Butler, Hyuk Ju Ryu, Wen-hsien Chuang, Martin von Haartman, Brett A. Buchea
Publikováno v:
International Symposium for Testing and Failure Analysis.
A novel fault isolation technique, electron beam induced resistance change (EBIRCh), allows for the direct stimulation and localization of eBeam current sensitive defects with resolution of approximately 100nm square, continuing a history of beam bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b73753c5a28dfa6a075bf94b5ede03
https://doi.org/10.31399/asm.cp.istfa2015p0382
https://doi.org/10.31399/asm.cp.istfa2015p0382
Publikováno v:
Journal of Applied Physics. 85:6898-6903
In order to increase the failure temperature of Ta diffusion barrier for Cu, we investigated the effect of a thin V insertion layer (100 A) into Ta film with/without ion bombardment on Ta diffusion barrier performance in Cu metallization. When the Ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a07f14b18e34ad234af3941c67357514
https://doi.org/10.1063/1.370209
https://doi.org/10.1063/1.370209
Publikováno v:
Chemical Vapor Deposition. 7:22-24
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adbfa9af35c71bcf67d1841ecebc9680
https://doi.org/10.1002/1521-3862(200101)7:1<22::aid-cvde22>3.0.co
https://doi.org/10.1002/1521-3862(200101)7:1<22::aid-cvde22>3.0.co