Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Hyuk Ryeol Park"'
Autor:
Sang-Chul Jung, Hyuk Ryeol Park, Ung Il Kang, Wang-Geun Shim, Ho-Young Jung, Sang Chai Kim, Young-Kwon Park
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:1208-1212
Catalytic combustion of benzene, toluene, and hexane (BTH) was carried out to investigate in this study the effect of palladium precursor on the property and performance of 1 wt.% Pd/γ-Al₂O₃. Properties were characterized by X-ray diffraction (X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae53b6db138348b5ddd2e95d252cb587
https://doi.org/10.1166/jnn.2019.15950
https://doi.org/10.1166/jnn.2019.15950
Autor:
Hyuk-Ryeol Park, Ji-Ae Choi
Publikováno v:
New Physics: Sae Mulli. 67:883-889
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69099bbb83842085eb9b915e25ba8b2b
https://doi.org/10.3938/npsm.67.883
https://doi.org/10.3938/npsm.67.883
Publikováno v:
New Physics: Sae Mulli. 65:850-855
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b2eedcb8d28e73a5807cd6f4f86422
https://doi.org/10.3938/npsm.65.850
https://doi.org/10.3938/npsm.65.850
Electrical Conductivity Behaviors Caused by Atmospheric Adsorption in Microcrystalline Silicon Films
Autor:
Tae-Hyun Lim, Hyuk-Ryeol Park
Publikováno v:
New Physics: Sae Mulli. 64:877-882
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::594436029dbfbe6b3f6f0346ce04da92
https://doi.org/10.3938/npsm.64.877
https://doi.org/10.3938/npsm.64.877
Autor:
Jae Sung Yun, Jongsung Park, Cheolhyun Lim, Changheon Kim, Suk-Ho Lee, Hyuk-Ryeol Park, Dohyung Kim, Gunho Kim
Publikováno v:
Thin Solid Films. 689:137523
We present the synthesis of surface-fluorinated, rutile-rich, meso-macroporous TiO2 nanofibers via simple post-treatment in a 5% hydrogen fluoride solution at room temperature and atmospheric pressure. Using various characterization methods, we demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb5f5e01632c7329d79cd0e084acfee
https://doi.org/10.1016/j.tsf.2019.137523
https://doi.org/10.1016/j.tsf.2019.137523
Autor:
Tae-Hyun Lim, Hyuk-Ryeol Park
Publikováno v:
New Physics: Sae Mulli. 61:797-803
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::388baeaeca5271392b65dcc951b29883
https://doi.org/10.3938/npsm.61.797
https://doi.org/10.3938/npsm.61.797
Autor:
Tae-Hyun Lim, Hyuk-Ryeol Park
Publikováno v:
New Physics: Sae Mulli. 60:811-816
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e3f70632481abc3a9f362c17682efc
https://doi.org/10.3938/npsm.60.811
https://doi.org/10.3938/npsm.60.811
Autor:
Geuk-Jeong Bang, Hyuk-Ryeol Park
Publikováno v:
Journal of Non-Crystalline Solids. 353:4174-4177
The transient photocapacitance spectroscopy (TPC) was applied to measure the optical absorption spectra of hydrogenated amorphous silicon (a-Si:H) in metal-insulator–semiconductor (MIS) structure. The measured spectra show the features of optical t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577ed86a476720ed30b8ebf296faab00
https://doi.org/10.1016/j.jnoncrysol.2007.06.038
https://doi.org/10.1016/j.jnoncrysol.2007.06.038
Autor:
Gye-Choon Park, Woon-Jo Jeong, Joung-Yun Park, Hyeon-Hun Yang, Ho-Geun Ahn, Young-Jun Kim, Hyuk-Ryeol Park, Chang-Dae Kim
Publikováno v:
physica status solidi c. 3:2601-2605
Process variables for manufacturing CuInSe2 thin films were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF power), and then by changi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9e78a8f848013adbdd7cc5a28de423b
https://doi.org/10.1002/pssc.200669604
https://doi.org/10.1002/pssc.200669604
Publikováno v:
Journal of Applied Physics. 90:6226-6229
The capatiance–voltage characteristics associated with the hole accumulation in hydrogenated amorphous silicon metal–insulator–semiconductor structures were investigated. The capacitance was measured by using an ac voltage and a quasistatic met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d99a933453d44de4d9c9c4bde49e82f
https://doi.org/10.1063/1.1419268
https://doi.org/10.1063/1.1419268