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Temperature Dependent Thermal Properties of a GaN-based Laser Diode Analyzed by an Electrical Method
Autor:
Jongseok Kim, Hyoyeong Park, Seungtaek Kim, Hoon Jeong, Kyeongkyun Lee, Jeong Hoon Yi, Yoonho Choi, Sukkoo Jung, Minsoo Noh, Jisoon Ihm, Hyeonsik Cheong
Publikováno v:
AIP Conference Proceedings.
We report thermal properties of a high power GaN‐based laser diode depending on the ambient temperature, which are analyzed using forward voltage changes due to heat generation during a current injection. The increasing rate of junction temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d993f6785dce5185e373b45912952b7d
https://doi.org/10.1063/1.3666275
https://doi.org/10.1063/1.3666275
