Výsledky vyhledávání - "Hyoungcheol Kwon"

Asynchronous pulse-modulated plasma effect on the generation of abnormal high-energetic electrons for the suppression of charge-up induced tilting and cell density-dependent etching profile variation

Autor: Hyoungcheol Kwon, Felipe Iza, Imhee Won, Minkyung Lee, Songhee Han, Raseong Park, Yongjin Kim, Dongyean Oh, Sung-Kye Park, Seonyong Cha

Publikováno v: Physics of Plasmas. 30:013504

The formation of high-energy electrons and ion fluxes induced by an abnormal electron heating mode in asynchronous pulse-modulated plasma was investigated using particle-in-cell simulation. We demonstrate that the abnormally high electron heating mod

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::00d2d2c0c28eb73630fd0a72b1cd6f3e
https://doi.org/10.1063/5.0126786

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Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features

Autor: Hyoungcheol Kwon, Imhee Won, Songhee Han, Dong-Hun Yu, Deuk-Chul Kwon, Yeon Ho Im, Felipe Iza, Dongyean Oh, Sung-Kye Park, Seonyong Cha

Publikováno v: Physics of Plasmas. 29:093510

Vertical scaling technique faces a physical limitation in 3D NAND device fabrication, even assuming superior etching technology. Another promising scaling technique to increase the storage density is lateral scaling, which increases the number of hol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7849eb1c498b80d77abdf9759a9bdead
https://doi.org/10.1063/5.0101106

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TCAD augmented generative adversarial network for hot-spot detection and mask-layout optimization in a large area HARC etching process

Autor: Hyoungcheol Kwon, Hyunsuk Huh, Hwiwon Seo, Songhee Han, Imhee Won, Jiwoong Sue, Dongyean Oh, Felipe Iza, Seungchul Lee, Sung Kye Park, Seonyong Cha

Publikováno v: Physics of Plasmas. 29:073504

Cost-effective vertical etching of plug holes and word lines is crucial in enhancing 3D NAND device manufacturability. Even though multiscale technology computer-aided design (TCAD) methodology is suitable for effectively predicting etching processes

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9f22e572995e6fd6d4c505ad2cb55792
https://doi.org/10.1063/5.0093076

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Investigation of layout effects in diode-triggered SCRs under very-fast TLP stress through full-size, calibrated 3D TCAD simulation

Autor: Chan-Su Yun, Seokkiu Lee, Chang Hwi Lee, Si Woo Lee, Arsen Terterian, Tommaso Cilento, Hyoungcheol Kwon, Manho Seung, Jung Eon Moon

Publikováno v: Microelectronics Reliability. :1103-1107

Electrostatic discharge (ESD) protection devices in advanced state-of-the-art CMOS technologies need to be optimized towards minimizing size and capacitive loading of the core circuitry without loss of ESD performance. In this work, a layout study of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cdebcc49073b3263aab4db5b292b896
https://doi.org/10.1016/j.microrel.2018.07.064

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Global model for pulsed inductively coupled plasma sources: Effect of edge-to-center density ratio and electron heating

Autor: Deuk-Chul Kwon, Dong-Hun Yu, Hyo-Chang Lee, Hyoungcheol Kwon, Yeon-Ho Im

Publikováno v: Physics of Plasmas. 27:073507

The volume-averaged global plasma model has been widely used to analyze the characteristics of plasma, although the spatial variation of plasma parameters cannot be obtained from it. It has also been used to obtain temporal plasma parameters for puls

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cc8421955629dda715157a1d312cd6c
https://doi.org/10.1063/5.0006505

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A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma

Autor: Mi Young Song, Jae Hyeong Park, Shin-Jae You, Dae Woong Kim, Yeong Geun Yook, Won-Seok Chang, Yeon-Ho Im, Hyoungcheol Kwon, Sung Kye Park, Jung Sik Yoon, Hae Sung You, Deuk Chul Kwon, Dong Hun Yu

Publikováno v: Applied Surface Science. 515:145975

We propose a semi-global surface reaction model to capture simultaneous polymer deposition and oxide etching in fluorocarbon plasma. The critical parameters of this model within reasonable ranges can be determined using predesigned experimental data

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b97074f07de0ea9b655e83b8c543301
https://doi.org/10.1016/j.apsusc.2020.145975

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Transient 3-D TCAD simulation of multiple snapback event in mixed-mode test for mutual relation between protection devices

Autor: Sung-Joo Hong, Seokkiu Lee, Manho Seung, Yoonsung Lee, Hyoungcheol Kwon, Sangyong Kim, Changyeol Lee

Publikováno v: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35833f4c80f07fda6ceb0019f09a6567
https://doi.org/10.1109/sispad.2015.7292363

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