Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Hyoung-Seub Rhie"'
Autor:
Sung-young Lee, Do-Hyun Choi, Kinam Kim, Hongsik Jeong, Bon-jae Koo, Seung-Kuk Kang, Jung-Hun Park, Hyoung-Seub Rhie, Young-Min Kang, H. J. Joo, Hyunho Kim
Publikováno v:
Japanese Journal of Applied Physics. 44:2706
We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ef7fffdabc55af8402dcb0b8bbf250
https://doi.org/10.1143/jjap.44.2706
https://doi.org/10.1143/jjap.44.2706
