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pro vyhledávání: '"Hyoung-Seub Rhie"'
Autor:
Sung-young Lee, Do-Hyun Choi, Kinam Kim, Hongsik Jeong, Bon-jae Koo, Seung-Kuk Kang, Jung-Hun Park, Hyoung-Seub Rhie, Young-Min Kang, H. J. Joo, Hyunho Kim
Publikováno v:
Japanese Journal of Applied Physics. 44:2706
We developed ferroelectric random access memory (FRAM)-embedded smartcards in which FRAM replaces electrically erasable PROM (EEPROM) and static random access memory (SRAM) to improve the read/write cycle time and endurance of data memories during op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ef7fffdabc55af8402dcb0b8bbf250
https://doi.org/10.1143/jjap.44.2706
https://doi.org/10.1143/jjap.44.2706
Publikováno v:
Official Gazette of the United States Patent & Trademark Office Patents; 4/28/2020, Vol. 1473 Issue 4, p45-48, 4p