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of 8
pro vyhledávání: '"Hyoung-Hee Kim"'
Autor:
Hyoung-Hee Kim
Publikováno v:
Korean Journal of Art Therapy. 20:965-989
Autor:
Choi Wae-Sun, Hyoung-Hee Kim
Publikováno v:
Korean Journal of Art Therapy. 17:1447-1472
Autor:
Seok-Hwan Oh, Hyoung-hee Kim, Kwang-Sub Yoon, Jin-Young Yoon, Yun-Kyeong Jang, So-Ra Han, Shi-yong Lee, Woo-Sung Han, Seong-Woon Choi
Publikováno v:
SPIE Proceedings.
Reflectivity comparison study of bottom anti reflectivity coating (BARC) was investigated at 30nm node devices with same gate width at different pitch sizes. The goal of this study is to elucidate the practical target of reflectivity for high NA imme
Autor:
null Hyoung-Hee Kim, null Jun-Tack Park, null Jung-Wook Choi, null Insin An, null Hye-Keun Oh
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2003. 2003 International Microprocesses and Nanotechnology Conference.
Autor:
Hyoung-Hee Kim, Seung-Wook Park, Kyung-Yoon Bang, Young-Keun Kwon, Hye-Keun Oh, Ilsin An, Kun-Sang Lee
Publikováno v:
Advances in Resist Technology and Processing XX.
It is important that more accurate process parameters are extracted to predict the results of each process by simulation. It is well known that both refractive index and absorption coefficient of photoresist (PR) are varied when the thickness of PR i
Publikováno v:
Advances in Resist Technology and Processing XX.
Dill’s ABC parameters are key parameters for the simulation of photolithography patterning. The exposure parameters of each resist should be exactly known to simulate the desired pattern. In ordinary extracting methods of Dill’s ABC parameters, t
Publikováno v:
Japanese Journal of Applied Physics. 43:3692
As the minimum feature size decreases, the gap between real experimental lithography process and simulated one increases. This gap should be reduced as small as possible by inserting the correct process parameters to simulation. Unfortunately, we do
Publikováno v:
2003 International Microprocesses & Nanotechnology Conference Digest of Papers Microprocesses & Nanotechnology 2003; 2003, p84-84, 1p