Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hyoung Ryeun Kim"'
Autor:
Soon Seok Kwon, Hee Chang Jang, Hyun Yul Park, Jin Young Kim, Hyoung Ryeun Kim, Tae Yong Noh, Gil Joo Song, Min Soo Kim, Youhwan Shin, Seoung-Kyo Yoo, Jeong Hoon Hong, Sung Min Hwang
Publikováno v:
Aerosol and Air Quality Research. 17:936-941
We analyzed defective bonding pad in various ways and determined the causes of defects that boosts oxidation of aluminium by fluoride residue on surface of pad with moisture. Additionally, we compared and evaluated methods to minimize pad defects in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c891d62e3a848e73de6fa7e6b447ab
https://doi.org/10.4209/aaqr.2016.10.0457
https://doi.org/10.4209/aaqr.2016.10.0457
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
In the recent semiconductor industry, as the device shrinks, spin-on dielectric (SOD) has been adopted as a widely used material because of its excellent gap-fill, efficient throughput on mass production. SOD film must be uniformly thin, homogeneous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d399c7a141aea92f1736474f0efe266
https://doi.org/10.1117/12.2297309
https://doi.org/10.1117/12.2297309
Autor:
Jin Young Kim, Seoung-Kyo Yoo, Hee Chang Jang, Hyoung Ryeun Kim, Tae Yong Noh, Euiji Choi, Hyun Yul Park, Jeong Hoon Hong, Sung Min Hwang, Soo Jong Koo, Eungsun Lee, Gil Joo Song
Publikováno v:
Aerosol and Air Quality Research. 15:2175-2183
We have investigated the hindrance to the deposition growth of silicon nitride (SiN) passivation layer from the contamination by airborne molecules in the front opening unified pod (FOUP). In particular, an artificial contamination of FOUP by fluorid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4c22cc0f7d851ce7242108a7c8aa59
https://doi.org/10.4209/aaqr.2014.10.0238
https://doi.org/10.4209/aaqr.2014.10.0238
Publikováno v:
International Symposium for Testing and Failure Analysis.
NCF (Non Conductivity Film) is a material used for under-fill purpose in the TSV (Through Silicon Via) process, and is a key material for ensuring TSV 3D Package (PKG) reliability. Among the types of defects generated by the NCF, the most typical typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2bdfc2e49d58e798c6f6c68f74543ad
https://doi.org/10.31399/asm.cp.istfa2017p0040
https://doi.org/10.31399/asm.cp.istfa2017p0040
Publikováno v:
International Symposium for Testing and Failure Analysis.
Through Silicon Via (TSV) Package (PKG) technology that forms a 3D stack with chip to chip or wafer to wafer contact, uses a variety of wet chemicals unlike conventional package technology. Therefore, new kinds of defects related to the wet chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23173ca4cbfc07e62017f59c8ac84173
https://doi.org/10.31399/asm.cp.istfa2017p0043
https://doi.org/10.31399/asm.cp.istfa2017p0043
Autor:
Seoung-Kyo Yoo, Soon Seok Kwon, Jeong Hoon Hong, Sung Min Hwang, Hyun Yul Park, Hee Chang Jang, Hyoung Ryeun Kim, Jin Young Kim, Tae Yong Noh, Gil Joo Song
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Abnormal bonding pads have often been formed through a series of wafer processing steps, which may cause a variety of failure modes in the efficient operation of the end products. In this work, the effect of fluorine-outgassing on its formation as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::730bbe5c10e6e4f8a7e05c51d8c70e0e
https://doi.org/10.1109/asmc.2017.7969216
https://doi.org/10.1109/asmc.2017.7969216
Publikováno v:
Proceedings of SPIE; 1/14/2018, Vol. 10586, p1-6, 6p
Autor:
Ju Hee Lee, Jong Hyeop Kim, Hyoung Ryeun Kim, Ho Joung Kim, Won Kim, Hyung Do Kim, Hee Chang Jang, Soon Ju Lee
Publikováno v:
18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
An investigation of open-contact failures in semiconductor devices is common issue. As we changed the cleaning condition of the contact, open failure happened. This contact has nitride in it and recess profile under it. To solve ambiguous fail mechan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5b448c948e6dfb28cf1188a7892af05
https://doi.org/10.1109/ipfa.2011.5992784
https://doi.org/10.1109/ipfa.2011.5992784
Publikováno v:
SPIE Proceedings.
Small contact holes are the most difficult structures for microlithography to print because it is sensitively affected by the process condition, pattern density and environment as well. Moreover, the patterning of very small contact hole features for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0045d946e229f9b056a4cc055d79614a
https://doi.org/10.1117/12.659398
https://doi.org/10.1117/12.659398
Publikováno v:
Optical Microlithography XVIII.
Currently, 193nm lithography including contact hole patterning is being integrated into manufacturable process at 80nm technology nodes. However, for 193nm contact hole patterning, many researchers have reported various troubles such as poor profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ebb716c636b97be8ef75f0225f8fd10
https://doi.org/10.1117/12.600254
https://doi.org/10.1117/12.600254