Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hyoung H. Kang"'
Autor:
Bing Dai, Harvey E. Berman, Steven B. Herschbein, Hyoung H. Kang, Carmelo F. Scrudato, Aaron D. Shore
Publikováno v:
International Symposium for Testing and Failure Analysis.
The presence of a full wafer dual-beam FIB on the process floor gave rise to an environment in which formerly segregated off-line lab and FAB tasks could be linked. One such idea involved a methodology for semi-automated defect targeting based on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b79ac28d9a5018506df9ad344f9ce9ff
https://doi.org/10.31399/asm.cp.istfa2010p0113
https://doi.org/10.31399/asm.cp.istfa2010p0113
Autor:
Oliver D. Patterson, Steven B. Herschbein, James P. Nadeau, John F. King, Scott Edward Fuller, Hyoung H. Kang
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper introduces a high volume and fast turnaround TEM sample preparation method and requirements for a 300 mm inline DualBeam (FIB/SEM) system with “hands-off” full automation. It requires a factory automation system, robust automated recip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190229619f16e5131b8ed2afc2ff8d82
https://doi.org/10.31399/asm.cp.istfa2010p0102
https://doi.org/10.31399/asm.cp.istfa2010p0102
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Electron-beam inspection (eBI) of the contact (CA) module for silicon-on-insulator (SOI) technology is discussed in this paper. Voltage contrast is used to detect CA opens in the SRAM and both CA opens and shorts in special test structures. The inspe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e8fba7059e9a89c84de1c5d2a5a20b
https://doi.org/10.1109/asmc.2010.5551467
https://doi.org/10.1109/asmc.2010.5551467
Publikováno v:
International Symposium for Testing and Failure Analysis.
Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb41aab8db5ba25ee8ee533542bf6f01
https://doi.org/10.31399/asm.cp.istfa2008p0128
https://doi.org/10.31399/asm.cp.istfa2008p0128
Autor:
Corey Senowitz, Hyoung H. Kang, Michael A. Gribelyuk, Oliver D. Patterson, Steven B. Herschbein
Publikováno v:
International Symposium for Testing and Failure Analysis.
Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36e4a52514dd24dc44479594541a4a07
https://doi.org/10.31399/asm.cp.istfa2008p0168
https://doi.org/10.31399/asm.cp.istfa2008p0168
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
This paper describes a methodology to measure process windows in-line at level using voltage contrast inspection and special families of test structures. This methodology allows rapid turn-around of experiments designed to find the most robust and be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3495dcb45a9f06afd3d722805b990ff
https://doi.org/10.1109/asmc.2008.4529000
https://doi.org/10.1109/asmc.2008.4529000
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
A new focused ion beam and electron beam based approach to metrology is used for accelerated process development of Chemical Mechanical Planarization (CMP) related back end processes. The technology is studied with the intention of employing it in ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1468e5dc6ca73037591aa7adc89322b4
https://doi.org/10.1117/12.538051
https://doi.org/10.1117/12.538051
Autor:
Xu Ouyang, Oliver D. Patterson, Karl W. Barth, Jay W. Strane, Hyoung H. Kang, Christian Lavoie, K. Wu
Publikováno v:
Scopus-Elsevier
A methodology for detecting silicide pipes on SOI technology in-line soon after their formation is described. Techniques currently exist to detect pipes in-line, but only much later in the process. This methodology, which is based on voltage contrast
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::581b4105ae4b7e78358f8d2569353015
http://www.scopus.com/inward/record.url?eid=2-s2.0-49649086070&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-49649086070&partnerID=MN8TOARS
