Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hyoshin Ahn"'
Autor:
Ji Young Park, Thanh-Cuong Nguyen, Deakeon Kim, Hyun Ji Song, Suk Koo Hong, Won-Joon Son, Hyoshin Ahn, Inkook Jang, Dae Sin Kim
Publikováno v:
Advances in Patterning Materials and Processes XL.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cee7ccd9137e24d76e5be06c21a4736
https://doi.org/10.1117/12.2652345
https://doi.org/10.1117/12.2652345
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We investigate the dopant trap level and equilibrium concentration of Si(110)/a-SiO 2 2 interface with a wide variety of dopants (B, C, N, Br, Cl, F and H). The electronic and atomic properties of intrinsic and extrinsic defects are analyzed using Fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0dc7084ba72bff1f5cecbb9ffc1d091
https://doi.org/10.23919/sispad49475.2020.9241668
https://doi.org/10.23919/sispad49475.2020.9241668
Autor:
Honglae Park, Moon-Hyun Cha, Inkook Jang, Ho-Kyu Kang, Hyoung-soo Ko, Sae-jin Kim, Hyoshin Ahn, Alexander Schmidt, Dae Sin Kim
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
For modern semiconductor devices, the level of details which we should investigate for predictive simulation is going extreme. Not only the atomistic simulation is required but equipment and transistor scale simulation is also needed to understand th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfddd54657a0deaa83ae1a4bfda53bb
https://doi.org/10.1109/iedm.2018.8614630
https://doi.org/10.1109/iedm.2018.8614630
Autor:
C. J. Park, Hyunsu Ju, Gitae Jeong, Chang-Hyun Park, Jung-hyeon Kim, S.O. Park, Seung-Hwan Song, Dong-Jun Seong, S. Choi, H. K. Kang, Hyoshin Ahn, Chilhee Chung, Min Kyu Yang, E. M. Kim, Chulgi Song, In-Gyu Baek
Publikováno v:
2011 International Electron Devices Meeting.
Vertical ReRAM (VRRAM) has been realized with modification of Vertical NAND (VNAND) process and architecture as a cost-effective and extensible technology for future mass data storage. Dedicated ALD/CVD deposition and wet etching processes were devel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56916d9feee1aed1ca6599ded02420bc
https://doi.org/10.1109/iedm.2011.6131654
https://doi.org/10.1109/iedm.2011.6131654
Autor:
Se-Chung Oh, Chilhee Chung, Keon-Soo Kim, J.H. Park, Yongjik Park, Yong-Jun Lee, Jung-hyeon Kim, Hong-Hyun Park, S. Choi, S.O. Park, H. K. Kang, Yung-Sang Kim, Sungho Park, Woojin Kim, Hong-jae Shin, JoonMyoung Lee, Hyung-Shin Kwon, Joo-Hyun Jeong, W. C. Lim, Hyoshin Ahn, Kyoung-Soo Kim
Publikováno v:
2011 International Electron Devices Meeting.
In this article, we report the first experimental demonstration of sub-20nm MTJ cells for investigating the downscaling feasibility of spin-transfer torque (STT) MRAM, one of the most promising candidates to replace conventional memories. We demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd9f68d7149fb0f719eb2b7f1c91075
https://doi.org/10.1109/iedm.2011.6131602
https://doi.org/10.1109/iedm.2011.6131602