Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hyonju Kim-Chauveau"'
Autor:
Benjamin Damilano, Jean-Yves Duboz, W. Y. Fu, Ph. Boucaud, Hyonju Kim-Chauveau, H. Zi, P. de Mierry, Hoi Wai Choi, Farsane Tabataba-Vakili, Fabrice Semond, Eric Frayssinet
Publikováno v:
Optics Express
Optics Express, Optical Society of America-OSA Publishing, 2021, 29 (14), pp.21280. ⟨10.1364/OE.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29, ⟨10.1364/oe.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29 (14), pp.21280. ⟨10.1364/OE.427727⟩
Optics Express, Optical Society of America-OSA Publishing, 2021, 29, ⟨10.1364/oe.427727⟩
Microdisks fabricated with III-nitride materials grown on GaN substrates are demonstrated, taking advantage of the high material quality of homoepitaxial films and advanced micro-fabrication processes. The epitaxial structure consists of InGaN/GaN mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::402c59c9d8c7e54569824be5ce09dd50
https://pubmed.ncbi.nlm.nih.gov/34265918
https://pubmed.ncbi.nlm.nih.gov/34265918
Autor:
H. P. D. Schenk, Philippe Vennéguès, B.S. Diaby, L. Bodiou, Hyonju Kim-Chauveau, Robert W. Martin, Eric Frayssinet, Ian Watson
Publikováno v:
Journal of Crystal Growth. 353:108-114
Our study of samples grown in different metalorganic chemical vapor deposition reactors and with different growth conditions reveals that V-pits are always present in (In x Al 1− x )N films whatever the layer thickness and the InN content. V-pits a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1aa309fec0b8ab1f30438ee75ef2cac4
https://doi.org/10.1016/j.jcrysgro.2012.05.004
https://doi.org/10.1016/j.jcrysgro.2012.05.004
Autor:
Yvon Cordier, Andreas D. Wieck, Philippe Vennéguès, Eric Frayssinet, J.-M. Lamy, Pleun Maaskant, P. de Mierry, R. Charash, Mahbub Akhter, L. Bodiou, Andreas Hangleiter, Jean-Yves Duboz, Hyonju Kim-Chauveau, A. P. Vajpeyi, L. Nguyen, Brian Corbett, Benjamin Damilano, Jean-Michel Chauveau
Publikováno v:
Journal of Crystal Growth. 338:20-29
We present the growth optimization and the doping by the metal organic chemical vapor deposition of lattice-matched Al0.82In0.18N bottom optical confinement layers for edge emitting laser diodes. Due to the increasing size and density of V-shaped def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bba8a92d7073dbf272ba0557ff1ba939
https://doi.org/10.1016/j.jcrysgro.2011.10.016
https://doi.org/10.1016/j.jcrysgro.2011.10.016
Publikováno v:
Journal of Crystal Growth. 316:30-36
We have studied the growth of AlInN lattice matched to GaN. We present the effect of reactor pressures, ammonia flux, total nitrogen gas flow, and the presence of hydrogen on the growth of Al-rich Al1−xInxN epilayers (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::585fbe56876a3a018fc479fcd40905cf
https://doi.org/10.1016/j.jcrysgro.2010.12.040
https://doi.org/10.1016/j.jcrysgro.2010.12.040
Autor:
Jesús Zúñiga-Pérez, M. Teisseire, Christiane Deparis, Christian Morhain, Philippe Vennéguès, Hyonju Kim-Chauveau, Borge Vinter, Jean-Michel Chauveau
Publikováno v:
physica status solidi c. 10:1322-1324
The growth of ZnxMn1–xO thin films by plasma-assisted MBE has been investigated. Mn incorporation results in drastic changes in the surface morphology, the distribution of the atoms at the surface and the epilayer growth rates, which have not been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24559ed75f72e6616587df27dfc5074a
https://doi.org/10.1002/pssc.201300039
https://doi.org/10.1002/pssc.201300039
Autor:
Hyonju Kim-Chauveau, Benjamin Damilano, Brian Corbett, J.-M. Lamy, Mahbub Akhter, Nicolas Cordero, Jean-Yves Duboz, P. de Mierry, Eric Frayssinet, R. Charash, Haymen Shams, Pleun Maaskant
Publikováno v:
physica status solidi c. 9:931-933
The low refractive index of AlInN makes it a strong candidate as a waveguide cladding layer for lasers emitting from the blue to the green. A sequence of AlInN layers interfaced periodically with GaN is needed to provide a smooth surface for growth o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99ba8dca6d290844d9f89af142cbec56
https://doi.org/10.1002/pssc.201100473
https://doi.org/10.1002/pssc.201100473
Autor:
Jean-Yves Duboz, Hyonju Kim-Chauveau, A. P. Vajpeyi, Philippe De Mierry, Pleun Maaskant, Mahbub Akther, Eric Frayssinet, R. Charash, Brian Corbett
Publikováno v:
physica status solidi c. 8:2378-2380
The current transport properties of an n -doped, lattice matched AlInN layer with multiple, periodic GaN insertions are reported. Samples with three and seven insertions were grown and mesa structures were etched through the AlInN structures to diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::919750a4c0856aa7aae512351c153dd6
https://doi.org/10.1002/pssc.201001165
https://doi.org/10.1002/pssc.201001165
Autor:
Jean Massies, Philippe De Mierry, Sakhawat Hussain, Sébastien Chenot, Benjamin Damilano, Hyonju Kim-Chauveau, Kaddour Lekhal, Julien Brault, Philippe Vennéguès, Eric Frayssinet
Publikováno v:
SPIE Proceedings.
Commercially available inorganic white light emitting diodes (LEDs) are essentially based on the combination of a blue InGaN based LED chip covered by a long wavelength emitting (yellow, red) phosphor. We propose to avoid this step of phosphor deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1245ca58f3cfb947d8e51b49a30158b
https://doi.org/10.1117/12.2037589
https://doi.org/10.1117/12.2037589
Autor:
Hyonju Kim-Chauveau, Pleun Maaskant, A. D. Dräger, P. de Mierry, Eric Frayssinet, R. Charash, Brian Corbett, Mahbub Akther, Jean-Yves Duboz, Andreas Hangleiter, J. M. Lamy
Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d0d0edda61683a3edd803be85fb7209
https://hdl.handle.net/10468/4321
https://hdl.handle.net/10468/4321
Autor:
Sakhawat Hussain, Benjamin Damilano, Kaddour Lekhal, Philippe Vennéguès, Philippe De Mierry, Hyonju Kim-Chauveau
Publikováno v:
Semiconductor Science and Technology. 29:035016
The difference of growth temperatures between InGaN quantum wells and GaN barriers has detrimental effects on the properties of the wells. Different capping processes of InGaN quantum well with a thin AlGaN layer have been investigated to prevent the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb2b56d448726329633ee70abca936f2
https://doi.org/10.1088/0268-1242/29/3/035016
https://doi.org/10.1088/0268-1242/29/3/035016