Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hyong-Ryol Hwang"'
Autor:
Hyong-Ryol Hwang, Young-Soo Sohn, Young Hoon Son, Seungseob Lee, Seung-Jun Bae, Hyuck-Joon Kwon, Jung-Bae Lee, Byongwook Na, Chang-Kyo Lee, Young-Hwa Kim, Dongkeon Lee, Duk-ha Park, Daesik Moon, Kwang-Il Park, Tae-Young Oh, Youn-sik Park, Kyung-Soo Ha
Publikováno v:
IEEE Journal of Solid-State Circuits. 55:157-166
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM is implemented in a 1 $\times$ nm DRAM process. Various techniques are applied to achieve higher bandwidth and lower power than LPDDR4X. To increase data rate, a WCK clocking scheme that is less vulnerable to power no
Autor:
Soo-bong Chang, Young-Soo Sohn, Hyuck-Joon Kwon, Duk-ha Park, Hyong-Ryol Hwang, Junghwan Park, Kwang-II Park, Choi Yeon-Kyu, Young Hoon Son, Hyunyoon Cho, Byongwook Na, Hyung-Joon Chi, Lim Suk-Hyun, Jin-Hun Jang, Tae-Young Oh, Seung-Jun Shin, Seouk-Kyu Choi, Daesik Moon, Kim Sang-Yun, Ki-Won Park, Seong-Jin Jang, Hyo-Joo Ahn, Jung-Hwan Choi, Seungseob Lee, Chang-Kyo Lee, Dongkeon Lee, Young-Hwa Kim, Youn-sik Park, Kyung-Soo Ha, Seok-Hun Hyun
Publikováno v:
ISSCC
High-speed and low-power techniques for the latest mobile DRAMs, such as LPDDR4/4X [1–3], have been developed to enable high-resolution displays, multiple cameras and 4G communication in mobile devices. However, DRAM with higher bandwidth and lower
Autor:
Hyo-Joo Ahn, Jae-Young Lee, Yoon-Joo Eom, Seok-Hun Hyun, Junha Lee, Kyoung-Ho Kim, Jong-Min Bang, Yong-Cheol Bae, Hye-Ran Kim, Hoon Lee, Jong-Hyuk Kim, Joon-Young Park, Seung-Jun Shin, Ki-Han Kim, Tae-Young Oh, Hanna Park, Hyuck-Joon Kwon, Young-Ryeol Choi, Yoon-Hwan Yoon, In-Dal Song, Youn-sik Park, Su-Jin Park, Soo-bong Chang, Kwang-Il Park, Kyong-Ho Jeon, Jin-Hee Park, Jung-Sik Kim, Chang-Kyo Lee, Young Sang Choi, Yoon-Gyu Song, Hyong-Ryol Hwang, Du-Yeul Kim, Gyo-Young Jin, Ho-Jun Chang, Seong-Jin Jang, Jung-Hwan Choi, Seung-Jun Bae
Publikováno v:
ISSCC
With growing demand for low-power mobile applications, such as wearable devices, smart phones and tablet PCs, low-power mobile DRAM has been identified as a mandatory requirement for low-power system designs. The recently developed LPDDR4 [1] is stil
Autor:
Min-Soo Jang, Joung-Wook Moon, Young-Hyun Jun, Hyunyoon Cho, Hanna Park, Ho-Young Kim, Jong-Min Bang, Hyong-Ryol Hwang, Joo-Sun Choi, Jin-Guk Kim, Sang-Kyu Kang, Jung-Bae Lee, Ho-Cheol Lee, Sooman Hwang, Jung-Sik Kim, Donghyuk Lee, Cheolmin Han, Ki-Won Park, Byongwook Na, So-Young Kim, Kye-Hyun Kyung, Chi Sung Oh, Jang-Woo Ryu
Publikováno v:
ISSCC
A 1.2 V 1 Gb mobile SDRAM, having 4 channels with 512 DQ pins has been developed with 50 nm technology. It exhibits 330.6 mW read operating power during 4 channel operation, achieving 12.8 GB/s data bandwidth. Test correlation techniques to verify fu
Autor:
Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun
Publikováno v:
2011 IEEE International Solid-State Circuits Conference.
Autor:
Du-Eung Kim, Dong Il Seo, Ki-Chul Chun, Jae-Yoon Sim, Hyong-Ryol Hwang, Sung-Jun Lee, Young-Il Seo, Chun-Sup Kim, Kee-Won Kwon, Sung-Yong Cho, Jungki Choi, Hong-Sun Hwang
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
A 1.0 V, 256 Mb SDRAM is designed in a 0.1 /spl mu/m CMOS technology. For low voltage applications, an offset compensated direct current sensing scheme improves refresh time as well as sensing performance. A charge-recycled precharge reuses the word-
Publikováno v:
ACM Transactions on Embedded Computing Systems; Jan2022, Vol. 21 Issue 1, p1-22, 22p
Autor:
Ha, Kyung-Soo, Lee, Seungseob, Park, Youn-Sik, Kwon, Hyuck-Joon, Oh, Tae-Young, Sohn, Young-Soo, Bae, Seung-Jun, Park, Kwang-Il, Lee, Jung-Bae, Lee, Chang-Kyo, Lee, Dongkeon, Moon, Daesik, Hwang, Hyong-Ryol, Park, Dukha, Kim, Young-Hwa, Son, Young Hoon, Na, Byongwook
Publikováno v:
IEEE Journal of Solid-State Circuits; Jan2020, Vol. 55 Issue 1, p157-166, 10p
Autor:
Kim, Jung-Sik, Oh, Chi Sung, Lee, Hocheol, Lee, Donghyuk, Hwang, Hyong Ryol, Hwang, Sooman, Na, Byongwook, Moon, Joungwook, Kim, Jin-Guk, Park, Hanna, Ryu, Jang-Woo, Park, Kiwon, Kang, Sang Kyu, Kim, So-Young, Kim, Hoyoung, Bang, Jong-Min, Cho, Hyunyoon, Jang, Minsoo, Han, Cheolmin, LeeLee, Jung-Bae
Publikováno v:
IEEE Journal of Solid-State Circuits; Jan2012, Vol. 47 Issue 1, p107-116, 10p