Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hyon Chol Lim"'
Autor:
Seung-Jin Yang, Jong-Rak Park, Hyon-Chol Lim, Jongtye Kim, Jae-Young Kim, Sang-Hwa Jeong, Jun-Hyeok Baek, Kyungmin Jang
Publikováno v:
Korean Journal of Optics and Photonics. 27:73-80
In this paper, we report the results of a study on the design and fabrication of a light-guiding plate (LGP) using a hybrid light-emitting diode (LED) and sunlight source that can be applied to a photobioreactor. LGP patterns for the LED source were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92f1961645444237214862ba29dea8f
https://doi.org/10.3807/kjop.2016.27.2.073
https://doi.org/10.3807/kjop.2016.27.2.073
Autor:
Sang-Hwa Jeong, Joon-Hyuck Baek, Seung-Jin Yang, Hun Kim, Hyon-Chol Lim, Jong-Rak Park, Jae-Young Kim, Kyungmin Jang
Publikováno v:
Optical Review. 22:779-785
We present the results of the optical design and fabrication of a light-guiding plate (LGP) that utilizes sunlight to be adopted as an illumination system for photobioreactors. A solar daylighting system was employed as the light source for the LGP.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2414dffbd28bebfe952f3e5be48c97d
https://doi.org/10.1007/s10043-015-0129-y
https://doi.org/10.1007/s10043-015-0129-y
Autor:
Gwang Ho Kim, Jong Rak Park, Min Yong Hwang, Hun Kim, Jong Tye Kim, Seong Seon Shin, Hyon Chol Lim, Sang-Hwa Jeong
Publikováno v:
Journal of the Korean Society of Precision Engineering. 30:143-147
We present results of the optical design and fabrication of a light-guiding plate (LGP) for a photobioreactor by using sunlight and a linear Fresnel lens. LGP patterns were designed by optical simulations with an illumination design tool, LightTools,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a844adcf2c00e064104e9b91cf98585
https://doi.org/10.7736/kspe.2013.30.2.143
https://doi.org/10.7736/kspe.2013.30.2.143
Autor:
Kwang-Young Ko, Mi Young Kim, Hyun Tae Kim, Il-Yong Park, Hyon-Chol Lim, Chul-Jin Yoon, Kwang-Dong Yoo, Yong-Keon Choi, Yong-Seong Kim, Nam-Joo Kim
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
We experimentally demonstrate a Super-Junction LDMOS transistor in a 0.18 µm BCD technology. The buffered Super-Junction structure is implemented by the use of existing N- and P-drift layer, which are optimized for conventional 20V to 30V LDMOS tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8f47523d4e127029efc8a63e649288
https://doi.org/10.1109/ispsd.2009.5158034
https://doi.org/10.1109/ispsd.2009.5158034
Autor:
Kwang-Dong Yoo, Bon-Keun Jun, Kwang-Young Ko, Chul-Jin Yoon, Nam-Joo Kim, Hyon-Chol Lim, Il-Yong Park, Yong-Keon Choi, Mi-Young Kim
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
We present a new BCD technology in a 0.18 μm technology platforms with a capability of 7 to 60V high-voltage devices such as DEMOS and LDMOS. The developed 0.18 mum BCD process provides various kinds of high voltage LDMOS such as 7, 12, 20, 50, 60 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddaa8e1734ebe5d91460169b0ad0ec5d
https://doi.org/10.1109/ispsd.2008.4538898
https://doi.org/10.1109/ispsd.2008.4538898
Autor:
Kwang-Young Ko, Il-Yong Park, Yong-Keon Choi, Chul-Jin Yoon, Ju-Hyoung Moon, Kyung-Min Park, Hyon-Chol Lim, Soon-Yeol Park, Nam-Joo Kim, Kwang-Dong Yoo, Hutter, L.N.
Publikováno v:
2010 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD); 2010, p71-74, 4p
Autor:
Il-Yong Park, Yong-Keon Choi, Kwang-Young Ko, Chul-Jin Yoon, Yong-Seong Kim, Mi-Young Kim, Hyun-Tae Kim, Hyon-Chol Lim, Nam-Joo Kim, Kwang-Dong Yoo
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's; 2009, p192-195, 4p
Autor:
Il-Yong Park, Yong-Keon Choi, Kwang-Young Ko, Chul-Jin Yoon, Bon-Keun Jun, Mi-Young Kim, Hyon-Chol Lim, Nam-Joo Kim, Kwang-Dong Yoo
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices & IC's; 2008, p64-67, 4p