Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hyojoon Seo"'
Autor:
Hagyoul Bae, Hyojoon Seo, Dae Hwan Kim, Dong Myong Kim, Hyunjun Choi, Saeroonter Oh, Jaeyeop Ahn, Jong-Uk Bae, Jungmin Lee, Sungwoo Jun, Sung-Jin Choi, Jun Seok Hwang
Publikováno v:
IEEE Transactions on Electron Devices. 61:3566-3569
A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias
Autor:
Sungwoo Jun, Hyunjun Choi, Dae Hwan Kim, Woojoon Kim, Inseok Hur, Euiyeon Hong, Jaewook Lee, Choon Hyeong Jo, Yun Hyeok Kim, Seonwook Hwang, Dong Myong Kim, Hagyoul Bae, Hyojoon Seo, Daeyoun Yun, Hyun Kwang Jeong
Publikováno v:
IEEE Electron Device Letters. 33:1138-1140
We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measure
Autor:
Mihee Uhm, Jieun Lee, Won Hee Lee, Euiyoun Hong, Dae Hwan Kim, Hyojoon Seo, Daeyoun Yun, Dong Myong Kim, Jaeman Jang, Hagyoul Bae, Hyunjun Choi
Publikováno v:
IEEE Electron Device Letters. 33:922-924
A distribution of interface states (Dit) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (Eph
Autor:
Mihee Uhm, Ji-Eun Lee, In-Young Chung, Dae Hwan Kim, Won Hee Lee, Hyeri Jang, Hyojoon Seo, Jung Han Lee, Dong Myong Kim
Publikováno v:
2011 11th IEEE International Conference on Nanotechnology.
The silicon nanowire (SiNW) biosensors, one of the most promising candidates of the electrical biosensor transducer, show various peculiar electrical phenomena under the electrolyte environment, including hysteresis occurring in the I–V measurement