Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Hyobong Hong"'
Autor:
Chang-Beom Kim, Hans-Joachim Krause, Seung-min Choi, Hyobong Hong, Sang-Jin Park, Jae-Chan Jeong, Dae-Yong Song
Publikováno v:
Scientific reports 9(1), 19050 (2019). doi:10.1038/s41598-019-55585-x
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-9 (2019)
Occlusion of the major cerebral artery usually results in brain hypoxic-ischemic injury, which evokes neuroinflammation and microglial activation. Activated microglia are considered a source of multiple neurotoxic factors, such as reactive oxygen spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9ef9ee3ea7a550db79d7ae9c8c66409
https://hdl.handle.net/2128/24043
https://hdl.handle.net/2128/24043
Autor:
Vallivedu Janardhanam, Hyung-Joong Yun, Jong-Hee Kim, Jae-Chan Jeong, Hyobong Hong, Chel-Jong Choi, I. Jyothi, Sung-Nam Lee
Publikováno v:
Journal of Alloys and Compounds. 688:875-881
The structural changes of Au/Yb contacts to p-type GaN were investigated using X-ray diffraction, X-ray photoemission spectroscopy, and atomic force microscopy as the annealing temperature was varied. The results were used to interpret the electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d617c20b2bc0a148c563ea20857dd71
https://doi.org/10.1016/j.jallcom.2016.07.292
https://doi.org/10.1016/j.jallcom.2016.07.292
Autor:
Hyung-Joong Yun, Jae-Chan Jeong, Kyu-Hwan Shim, Vallivedu Janardhanam, Hyobong Hong, Chel-Jong Choi, I. Jyothi, Sung-Nam Lee, Hoon-Ki Lee
Publikováno v:
Microelectronic Engineering. 163:26-31
The effect of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode (SBD) was investigated. The introduction of the Ta-oxide interlayer in-between Ni film and Ge substrate resulted in an increase in the barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dd7caf38f7c3cb7c3c9fa93aafc5f31
https://doi.org/10.1016/j.mee.2016.06.006
https://doi.org/10.1016/j.mee.2016.06.006
Autor:
Hyobong Hong, Hyunjin Cho, Sung-Nam Lee, Chel-Jong Choi, Myung Jong Kim, Yeon-Ho Kil, Jae-Chan Jeong, Kyu-Hwan Shim, Zagarzusem Khurelbaatar
Publikováno v:
Superlattices and Microstructures. 91:306-312
We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current–voltage ( I–V ) characteristics and low frequency noise measurements. The Schottky b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd100a201c5f75cdc18c38dcb437798
https://doi.org/10.1016/j.spmi.2016.01.029
https://doi.org/10.1016/j.spmi.2016.01.029
Publikováno v:
Materials Science in Semiconductor Processing. 39:390-399
The electrical characteristics of Al/strained Si-on-insulator (sSOI) Schottky diode have been investigated using current–voltage ( I–V ) and capacitance–voltage ( C–V ) measurements in the wide temperature range of 200–400 K in steps of 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d85658d9c7f563698eb1f45c7b0c5358
https://doi.org/10.1016/j.mssp.2015.05.043
https://doi.org/10.1016/j.mssp.2015.05.043
Autor:
Sung-Yong Chang, Sung-Nam Lee, Chel-Jong Choi, Hyung-Joong Yun, Jouhan Lee, Kyu-Hwan Shim, Hyobong Hong, Min-Sung Kang, Zagarzusem Khurelbaatar
Publikováno v:
Journal of Alloys and Compounds. 650:658-663
Current–voltage ( I–V ) characteristics of Au/n-type Ge Schottky barrier diodes (SBDs) with and without graphene interlayer were investigated in the temperature range of 180–340 K. For both devices, the Schottky parameters –such as the barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2472713b0ca6dc571c62040b7b8ea0
https://doi.org/10.1016/j.jallcom.2015.08.031
https://doi.org/10.1016/j.jallcom.2015.08.031
Autor:
Kyu-Hwan Shim, Zagarzusem Khurelbaatar, Taek Sung Kim, Hyobong Hong, Chel-Jong Choi, Yeon-Ho Kil
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:7832-7835
We report on the optoelectronic characterization of Ge p–i–n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ebc63810a623ede24a329e0e210a828
https://doi.org/10.1166/jnn.2015.11195
https://doi.org/10.1166/jnn.2015.11195
Autor:
Chel-Jong Choi, I. Jyothi, V. Rajagopal Reddy, Jouhahn Lee, V. Janardhanam, Hyobong Hong, Hyung-Joong Yun
Publikováno v:
Journal of Alloys and Compounds. 637:84-89
The current–voltage ( I – V ) characteristics of Al/p-type Si Schottky diodes with pristine and 5 wt.% sorbitol-doped organic PEDOT:PSS interlayers have been investigated. It was found that the barrier heights of the diodes with pristine and sorb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f977e2123b2ceaa17b1b58711dff996
https://doi.org/10.1016/j.jallcom.2015.02.210
https://doi.org/10.1016/j.jallcom.2015.02.210
Autor:
Hyobong Hong, Chel-Jong Choi, Zagarzusem Khurelbaatar, Kyu-Hwan Shim, Jaehee Cho, V. Rajagopal Reddy
Publikováno v:
MATERIALS TRANSACTIONS. 56:10-16
The temperature dependence of the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of an Au/n-type Si Schottky barrier diode (SBD) with a PEDOT:PSS interlayer was investigated. The SBD parameters, such as Schottky barrier height ()
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9555ef8c2dc6c6f9aa79a2cfbce044e4
https://doi.org/10.2320/matertrans.m2014263
https://doi.org/10.2320/matertrans.m2014263
Publikováno v:
Journal of Microbiology. 52:801-804
Density functional theory (DFT) calculations were used to explore the relationship between the biotransformation of dibenzo-p-dioxin and selected chlorinated derivatives by resting cells of Sphingomonas wittichii RW1 and measuring the thermodynamic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a1dbe1a403f842a5ea853a61684775f
https://doi.org/10.1007/s12275-014-3424-6
https://doi.org/10.1007/s12275-014-3424-6