Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Hyo-Young Yeom"'
Autor:
Yuxuan Zhang, Mingyuan Liu, Hyo-Young Yeom, Byung-Hyuk Jun, Jinwook Baek, Kwangsoo No, Han-Wook Song, Sunghwan Lee
Publikováno v:
JPhys Materials, Vol 7, Iss 1, p 015011 (2024)
We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the
Externí odkaz:
https://doaj.org/article/08592b3702824800bed83ab835357225
Publikováno v:
New Physics: Sae Mulli. 71:819-826
Publikováno v:
Thin Solid Films. 516:3105-3111
Amorphous ZnO–SnO2–In2O3 films were grown by direct current magnetron sputtering from vacuum hot pressed ceramic oxide targets of Zn:In:Sn cation ratios 1:2:1 and 1:2:1.5 onto glass substrates. X-ray diffraction analysis showed that the microstru
Publikováno v:
Thin Solid Films. 496:89-94
We report on the processing, phase stability, and electronic transport properties of indium oxide (In 2 O 3 ) doped with 10 wt.% zinc oxide (ZnO) deposited to a thickness of 100 nm using DC magnetron sputter deposition at room temperature and 350 °C
Publikováno v:
Analytical Chemistry. 74:3127-3133
The effect of the microstructure of tin-doped indium oxide (ITO) films on their electrochemical performance was studied using three redox probes, tris(2,2'-bipyridyl ruthenium(II) chloride (Ru(bpy)3(2+/3+)), ferrocyanide (Fe(CN)6(4-/3-)), and ferroce
Publikováno v:
Thin Solid Films. 411:17-22
We report on the effect of oxygen stoichiometry on the amorphous structure and crystallization kinetics of indium tin oxide. DC magnetron sputtering was used to deposit 200-nm-thick films under low, optimum (with respect to conductivity), and high ox
Publikováno v:
Flexible Flat Panel Displays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::287f9e0366740450db7170f42a8f38eb
https://doi.org/10.1002/0470870508.ch5
https://doi.org/10.1002/0470870508.ch5
Publikováno v:
MRS Proceedings. 905
Thin film transistors were fabricated using amorphous IZO (In2O3-10wt%ZnO) with low carrier concentration (∼3×1017/cm3) for the channel material and a-IZO with high carrier concentration (∼2×1020/cm3) for source-drain metallization. The perform
Publikováno v:
MRS Proceedings. 747
We have investigated the structure of sputter deposited amorphous and crystalline indium oxide films by electron diffraction. Selected area diffraction patterns were recorded for both states from which radial density functions were derived. The compa
Publikováno v:
MRS Proceedings. 666
The deposition of ITO onto glass substrates at room temperature results in a metastable amorphous phase that undergoes crystallization at remarkably low homologous temperatures (T/Tm