Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hyo-Bae Kim"'
Autor:
Jisu Byun, Wonwoo Kho, Hyunjoo Hwang, Yoomi Kang, Minjeong Kang, Taewan Noh, Hoseong Kim, Jimin Lee, Hyo-Bae Kim, Ji-Hoon Ahn, Seung-Eon Ahn
Publikováno v:
Nanomaterials, Vol 13, Iss 19, p 2704 (2023)
The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing of unstructured data, encompassing text, speech, and video. Traditional serial computing systems based on the von Neumann architecture, employed
Externí odkaz:
https://doaj.org/article/9b14d83f0ce34e26addc877336762717
Publikováno v:
Nanomaterials, Vol 13, Iss 15, p 2187 (2023)
Hf1−xZrxO2 (HZO) thin films are versatile materials suitable for advanced ferroelectric semiconductor devices. Previous studies have shown that the ferroelectricity of HZO thin films can be stabilized by doping them with group III elements at low c
Externí odkaz:
https://doaj.org/article/88543e62942a4f62a04e68faac221664
Publikováno v:
Ceramics International. 48:25661-25665
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e179b8308410f1bae7fae247ea851d70
https://doi.org/10.1016/j.ceramint.2022.05.397
https://doi.org/10.1016/j.ceramint.2022.05.397
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::785e72527c8a3dd0c4e4fb2fbbd0d542
https://doi.org/10.2139/ssrn.4260106
https://doi.org/10.2139/ssrn.4260106
Publikováno v:
Materials Letters. 321:132418
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a788aede122c2569a5d4791c2af1b817
https://doi.org/10.1016/j.matlet.2022.132418
https://doi.org/10.1016/j.matlet.2022.132418
Publikováno v:
Nanoscale. 13(18)
HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::52827bcd00f5d554bd84a8cde60b4c06
https://pubmed.ncbi.nlm.nih.gov/33908540
https://pubmed.ncbi.nlm.nih.gov/33908540
Publikováno v:
Nanoscale.
HfO2-based ferroelectric thin films deposited via atomic layer deposition have been extensively studied as promising candidates for next-generation ferroelectric devices. The conversion of an amorphous Hf1-xZrxO2 film to the ferroelectric phase (non-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc60015af371abbbdf46572b93336b12
https://doi.org/10.1039/d1nr01535d
https://doi.org/10.1039/d1nr01535d
Autor:
Hyo‐Bae Kim, Kyun Seong Dae, Youkyoung Oh, Seung‐Won Lee, Yoseop Lee, Seung‐Eon Ahn, Jae Hyuck Jang, Ji‐Hoon Ahn
Publikováno v:
Advanced Materials Interfaces. 9:2102528
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3ea04701b4183eae551afcc37cb8a37
https://doi.org/10.1002/admi.202102528
https://doi.org/10.1002/admi.202102528
Autor:
Sungmun Song, Woori Ham, Gyuil Park, Wonwoo Kho, Jisoo Kim, Hyunjoo Hwang, Hyo‐Bae Kim, Hyunsun Song, Ji‐Hoon Ahn, Seung‐Eon Ahn
Publikováno v:
Advanced Materials Technologies. 7:2101323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937e839d3ff87f78a8920181963be9e8
https://doi.org/10.1002/admt.202101323
https://doi.org/10.1002/admt.202101323
Publikováno v:
Materials Letters. 286:129220
Strontium niobate thin films have potential for next-generation high-k dielectric applications. In this work, we investigated the fabrication of SrxNb1-xOy thin films by atomic layer deposition for the first time and examined their physical and elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3640bb4c51bcd442526082549fd8d2b
https://doi.org/10.1016/j.matlet.2020.129220
https://doi.org/10.1016/j.matlet.2020.129220