Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hyo Sik Mun"'
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Rokyeon Kim, Hyo Sik Mun, Hoon Min Kim, Hyung Joon Kim, Tai Hoon Kim, Namwook Kim, Jaejun Yu, Kee Hoon Kim, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials, Vol 2, Iss 5, Pp 056107-056107-8 (2014)
We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when t
Externí odkaz:
https://doaj.org/article/4d9d5a055d004cb3b88f5e4220586ae1
Autor:
Na Rae Song, Kyu Ho Cho, Hyo Sik Mun, Joon Ki Hong, Si Dong Kim, Du Wan Kim, Young Hwa Kim, Jae Gwan Choi
Publikováno v:
Korean Journal of Agricultural Science. 41:41-46
The pedigree data of 86,639 heads from six major swine breeding farms were investigated to check levels of inbreeding and effective population size of breeding stocks. The average rate of inbreeding was 1.04%, 0.87%, 3.17%, 1.05%, 3.23% and 3.33% for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a3703522ae342cfd35cb73610cffd1
https://doi.org/10.7744/cnujas.2014.41.1.041
https://doi.org/10.7744/cnujas.2014.41.1.041
Autor:
Eva Pavarini, N. Egetenmeyer, Yoshinori Tokura, John L. Sarrao, Tai Hoon Kim, Evgeny Gorelov, Keisuke Shibuya, Claude Ederer, Hyung J. Kim, Myung-Hwan Whangbo, Useong Kim, Simon Gerber, Chanjong Ju, Etienne Janod, Michel Kenzelmann, Masashi Kawasaki, Cristian Vaju, Vincent Guiot, E. Dorolti, Masaki Nakano, Byung-Gu Jeon, Hoon Kim, Jorge L. Gavilano, Joe D. Thompson, Laurent Cario, Roman Kovacik, Benoit Corraze, Roman Movshovich, Daisuke Okuyama, M. A. N. Araújo, J. M. P. Carmelo, Christof Niedermayer, Kee Hoon Kim, Andrea Bianchi, Eric Ressouche, Takafumi Hatano, Erik Koch, Woong-Jhae Lee, Guoren Zhang, Shimpei Ono, Eric D. Bauer, Kookrin Char, Hyun-Joo Koo, S. W. White, E. Kan, Kwang Taek Hong, Hyo Sik Mun, Yoshihiro Iwasa, Philipp Werner
Publikováno v:
Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95659d9f9efc4f9c59e8266b1c2b5d14
https://doi.org/10.1002/9783527667703.ch33
https://doi.org/10.1002/9783527667703.ch33
Autor:
Woong-Jhae Lee, Hyo Sik Mun, Useong Kim, Kee Hoon Kim, Kookrin Char, Hoon Kim, Kwang Taek Hong, Tai Hoon Kim, Hyung J. Kim, Byung-Gu Jeon, Jaejun Yu, Ji Yeon Kim
Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications. BaSnO3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that La doped BaSnO3 exhibits unusually high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fc95cc51609f706322740c6e907a7e6
http://arxiv.org/abs/1207.0764
http://arxiv.org/abs/1207.0764
Autor:
Byung-Gu Jeon, Hyung Joon Kim, Hyo Sik Mun, Kee Hoon Kim, Chanjong Ju, Useong Kim, Tai Hoon Kim, Kookrin Char, Kwang Taek Hong, Hoon Kim, Woong-Jhae Lee
We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm^2(Vs)^-1 at a doping level of 8x10^19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::793ffa4dd72a08d4bee277f16bbe7aff
http://arxiv.org/abs/1204.6702
http://arxiv.org/abs/1204.6702
Autor:
Useong Kim, Chulkwon Park, Taewoo Ha, Rokyeon Kim, Hyo Sik Mun, Hoon Min Kim, Hyung Joon Kim, Tai Hoon Kim, Namwook Kim, Jaejun Yu, Kee Hoon Kim, Jae Hoon Kim, Kookrin Char
Publikováno v:
APL Materials; 2014, Vol. 2 Issue 5, p1-8, 8p