Zobrazeno 1 - 10 of 15 pro vyhledávání: '"Hyo Sang Kang"'
1
Study on the Variation of Surface Morphology and Residual Stress Under Various Thermal Annealing Conditions with Bulk GaN Substrates Grown by HVPE
Autor: Seong Kuk Lee, Joo-Hyung Lee, Hee Ae Lee, Sung Chul Yi, Hyo Sang Kang, Jae Hwa Park, Won Il Park, Seunghoon Lee
Publikováno v: Electronic Materials Letters. 17:43-53
We investigated the effects of different thermal treatment conditions on the surface and internal residual strains of bulk GaN grown by hydride vapor phase epitaxy (HVPE). Thermal annealing was performed at 700–1000 °C for 1–5 h in nitrogen atmo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb9cad51ea0e18ffb0fab8867b2e288a
https://doi.org/10.1007/s13391-020-00252-x
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2
Optimization of the CMP Process with Colloidal Silica Performance for Bulk AlN Single Crystal Substrate
Autor: Won Il Park, Hee Ae Lee, Sung Chul Yi, Jae Hwa Park, Seung Min Kang, Joo-Hyung Lee, Hyo Sang Kang
Publikováno v: Korean Journal of Metals and Materials. 57:582-588
Chemical mechanical polishing (CMP) of bulk AlN was performed with colloidal silica slurry at pH 9 for different times. The result shows that colloidal silica slurry at pH 9, which has the relatively high surface charge of -50.7 mV is most stable, an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4f48c56d89546968044820420438ca18
https://doi.org/10.3365/kjmm.2019.57.9.582
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4
Optimization of sintering process of the far-infrared radiation ceramic
Autor: Han Woo Nam, Hyun Mi Kim, Jae Hwa Park, Ki Woong Nam, Kwang Bo Shim, Bong Geun Choi, Hyo Sang Kang, Jae Sang Choi
Publikováno v: Journal of the Korean Crystal Growth and Crystal Technology. 26:28-34
Far-infrared radiation ceramic is an attractive material that provides thermal therapy by permeating the infrared rays into the deep inside of the human skin. Therefore, it is currently used for thermal therapy devices, thermal mat, heating equipment
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::abf3b08b28492bd231901b7587444ae3
https://doi.org/10.6111/jkcgct.2016.26.1.028
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5
Development of High Selectivity Phosphoric Acid and its Application to Flash STI Pattern
Autor: Sung Ki Park, Kwon Hong, Sung-Hyuk Cho, Hyo Sang Kang, Kihong Yang, Young Bang Lee, Ji Hye Han, Hyung-Hwan Kim, Sanghyon Kwak, Hyung-Soon Park
Publikováno v: ECS Transactions. 45:251-256
In a manufacturing semiconductor device, silicon nitride (Si3N4) and silicon oxide (SiO2) materials are typically and widely used as dielectric materials. In general, phosphoric acid is used for etch of silicon nitride film. The etch rate of phosphor
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb8825c6e3cb16829b8071f76cc465dc
https://doi.org/10.1149/1.3700960
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6
Multi-wavelength Raman and photoluminescence characterization of implanted n+/p junctions under various rapid thermal annealing conditions
Autor: Woo Sik Yoo, Choon Hwan Kim, Kyoung Bong Rouh, Kitaek Kang, Hyo Sang Kang, Toshikazu Ishigaki, Yong Seok Eun, Takeshi Ueda
Publikováno v: AIP Conference Proceedings.
Arsenic (As+) implanted p-type wafers for n+ junction were prepared and annealed in a resistively heated, single wafer rapid thermal furnace in N2. The wafers were non-destructively characterized by multi-wavelength Raman spectroscopy and multi-wavel
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f0e5f05e71558c724a7365d7533357b
https://doi.org/10.1063/1.4766513
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7
Beyond 20nm DRAM peripheral transistor: Challenges and ion implantation solutions
Autor: Seon-Yong Cha, Jaechun Cha, IlSic Jang, Seung-Woo Jin, ByounGyu Kim, HyoYoung Kang, Hyo Sang Kang, Anbae Lee, DongGoo Choi
Publikováno v: AIP Conference Proceedings.
To make high performance sub 20nm DRAM peripheral transistor, new process approach in the ion implantation is strongly required. Main hurdles to meet the peripheral transistor's electrical requirement are Contact Resistance, Short Channel Effect and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31043811048c6a27a32aa01a868f0a55
https://doi.org/10.1063/1.4766480
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10
Akademický článek
Oxygen Plasma Treated Aluminum as a Gate Dielectric for AlGaN/GaN High Electron Mobility Transistors.
Autor: Choon-Hwan Kim, Il-Cheol Rho, Soo-Hyun Kim, Il-Keoun Han, Hyo-Sang Kang, Seung-Wook Ryu, Hyeong-Joon Kim, Selvaraj, S. Lawrence, Egawa, Takashi
Publikováno v: Journal of The Electrochemical Society; 22009, Vol. 156 Issue 9, pH690-H693, 4p, 4 Black and White Photographs, 3 Diagrams, 1 Chart, 10 Graphs
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