Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Hyewon Shim"'
Publikováno v:
Nanomaterials, Vol 11, Iss 1, p 223 (2021)
In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI2) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH3NH3PbI3) perovskites. Our
Externí odkaz:
https://doaj.org/article/9f7b9554760542ee8f5e63ef0074fdfc
Autor:
Rakesh Ranjan, Pavitra Ramadevi Perepa, Ki-Don Lee, Hokyung Park, Peter Kim, Ganesh Chakravarthy Yerubandi, Jon Haefner, Caleb Dongkyun Kwon, Min-Jung Jin, Wenhao Zhou, Hyewon Shim, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a8405c8d26cca958a0be8c94c4c1564
https://doi.org/10.1109/irps48203.2023.10118344
https://doi.org/10.1109/irps48203.2023.10118344
Autor:
Manisha Sharma, Hokyung Park, Yinghong Zhao, Ki-Don Lee, Liangshan Chen, Joonah Yoon, Rakesh Ranjan, Caleb Dongkyan Kwon, Hyewon Shim, Myung Soo Yeo, Shinyoung Chung, Jon Haefner
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa03ccd80186c6ca8d27ff32ad8f70af
https://doi.org/10.1109/irps48203.2023.10117774
https://doi.org/10.1109/irps48203.2023.10117774
Autor:
Seongkyung Kim, Hyerim Park, Eunyu Choi, Young Han Kim, Dahyub Kim, Hyewon Shim, Shinyoung Chung, Paul Jung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c2fda4fcd3238658bdec99691421cc
https://doi.org/10.1109/irps48203.2023.10117953
https://doi.org/10.1109/irps48203.2023.10117953
Publikováno v:
IEEE Transactions on Electron Devices. 67:5396-5402
In 10-nm node core FinFETs, we analyzed the cause of higher hot carrier degradation (HCD) in pFinFETs than in nFinFETs. Self-heating effect is severe in pFinFETs because SiGe is used as the source/drain materials, which makes the device temperature h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6d379e59373b45d9f537eb03f1ced3
https://doi.org/10.1109/ted.2020.3031246
https://doi.org/10.1109/ted.2020.3031246
Autor:
Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shinyoung Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2e2dd4d202c0200df824c88fccac35f
https://doi.org/10.1109/irps48227.2022.9764581
https://doi.org/10.1109/irps48227.2022.9764581
Autor:
Taiki Uemura, Byungjin Chung, Jegon Kim, Hyewon Shim, Shinyoung Chung, Brandon Lee, Jaehee Choi, Shota Ohnishi, Ken Machida
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a0c4740261d3e46c7b67300ba21dcb0
https://doi.org/10.1109/irps48227.2022.9764438
https://doi.org/10.1109/irps48227.2022.9764438
Autor:
Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, Youngwoo Cho, Hwasung Rhee, Sangwoo Pae
Publikováno v:
IEEE Transactions on Electron Devices. 66:5399-5403
In this article, we report the reliability characterization of 7-nm technology, in which the highly scaled sixth generation of FinFETs and 256-Mb static random access memory (SRAM) cells were newly developed by featuring extreme ultraviolet (EUV). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3ac446006f81966c9b6356d809ebb07
https://doi.org/10.1109/ted.2019.2950008
https://doi.org/10.1109/ted.2019.2950008
Publikováno v:
IEEE Electron Device Letters. 40:1354-1357
In this letter, we investigate the threshold voltage shift ( $\Delta {V} _{\textsf {th}}$ ) by negative bias temperature instability (NBTI) coupled with the self-heating effect (SHE) in a 14-nm bulk ${p}$ -FinFET. To analyze the effect of NBTI in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c323813d486aa1b3a25517223eb8ee5
https://doi.org/10.1109/led.2019.2930077
https://doi.org/10.1109/led.2019.2930077
Autor:
Hyewon Shim, Hyunchul Sagong, Junekyun Park, Jinju Kim, Hwa-Sung Rhee, Hai Jiang, Eun-Cheol Lee, Kihyun Choi
Publikováno v:
IRPS
Time dependent variability has become a significant concern for End-of-lifetime(EOL) reliability prediction for advanced technology with continuous scaling. In this work, we explore time dependent variability of BTI and HCI on our advanced FinFET tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8304388604ba85cbf4b415ebb79b07a3
https://doi.org/10.1109/irps46558.2021.9405129
https://doi.org/10.1109/irps46558.2021.9405129