Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hyewon Kyung"'
Publikováno v:
IEEE Access, Vol 12, Pp 45112-45117 (2024)
We propose a novel structure of a charge trapping layer, that is doped between Word Line(WL) spaces in 3D NAND flash memory. To estimate the retention characteristics, the $\Delta \text{V}_{\mathrm {th}}$ of each structure by doping type is compared
Externí odkaz:
https://doaj.org/article/bf58a11d9fb94917ab3a6ba585a41ee2
Publikováno v:
IEEE Access, Vol 12, Pp 15050-15055 (2024)
As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This latera
Externí odkaz:
https://doaj.org/article/6f613eab578547038357eb8d0d83695c