Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hyeonwook Lim"'
Autor:
Dasol Kim, Youngsam Kim, Jin-Su Oh, Changwoo Lee, Hyeonwook Lim, Cheol-Woong Yang, Eunji Sim, Mann-Ho Cho
Publikováno v:
ACS nano. 16(12)
Reversible conversion over multi-million-times in bond types between metavalent and covalent bonds becomes one of the most promising bases for universal memory. As the conversions have been found in metastable states, extended category of crystal str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ed7f494ecde9ceaebcb50769b4aa18b
https://pubmed.ncbi.nlm.nih.gov/36469438
https://pubmed.ncbi.nlm.nih.gov/36469438
Improvements in Thermal Stability of Sb2Te3 by Modulation of Microstructure via Carbon Incorporation
Autor:
Soobin Hwang, Taek Sun Jung, Mann Ho Cho, Jin-Su Oh, Jae Hoon Kim, Cheol-Woong Yang, Dasol Kim, Changwoo Lee, Hyeonwook Lim
Publikováno v:
ACS Applied Electronic Materials. 3:3472-3481
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fe256afaa56db350153713b79f01f1
https://doi.org/10.1021/acsaelm.1c00427
https://doi.org/10.1021/acsaelm.1c00427
Autor:
Mann Ho Cho, Young-Kyun Kwon, Hyeonwook Lim, Changwoo Lee, Dasol Kim, Soobin Hwang, Hanjin Park, Jeong Hwa Han
Publikováno v:
ACS Applied Materials & Interfaces. 12:37285-37294
Although Sb2Te3, as a candidate material for next-generation memory devices, has attractive properties such as higher operation speed and lower power consumption than Ge2Sb2Te5, its poor stability ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05a12e3b7dcbe7b2e6bd64c62bb356f0
https://doi.org/10.1021/acsami.0c05811
https://doi.org/10.1021/acsami.0c05811