Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hyeonwoo Nam"'
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 42:293-301
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82e32d72bcb42b169cb124e1e4f9ada9
https://doi.org/10.7779/jksnt.2022.42.4.293
https://doi.org/10.7779/jksnt.2022.42.4.293
Publikováno v:
Mechanical Systems and Signal Processing. 198:110418
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f45fd42f3308632619ef93815c37a2d
https://doi.org/10.1016/j.ymssp.2023.110418
https://doi.org/10.1016/j.ymssp.2023.110418
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 40:435-443
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b647091846b6436a384560a76a999b43
https://doi.org/10.7779/jksnt.2020.40.6.435
https://doi.org/10.7779/jksnt.2020.40.6.435
Publikováno v:
JOURNAL OF THE KOREAN SOCIETY FOR NONDESTRUCTIVE TESTING. 40:326-335
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f48b9985f6460a0c9a902cef16c36b9
https://doi.org/10.7779/jksnt.2020.40.5.326
https://doi.org/10.7779/jksnt.2020.40.5.326
Autor:
Minjung Jin, Soonwan Kwon, Taiki Uemura, Y. Kim, J.M. Park, Hwa-Sung Rhee, Young-Joon Cho, Mi-Hyang Lee, Bomi Kim, Kihyun Choi, Tae-Young Jeong, Myeong-cheol Kim, Hyewon Shim, Hai Jiang, Hyunchul Sagong, K. Kim, Won-Jin Kim, Hyeonwoo Nam, D. Mun, Sangwoo Pae, E. Kwon, Myungsoo Yeo, Bang-Lin Lee
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
The product reliability of 7nm FinFET technology is demonstrated with 5G SoC platform. RO aging and other highspeed operating 5G IPs show an expected reliability model behavior, which has further improvement of frequency noise reduction through 3-pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612047cdc3eb0b3d16f46a21e99263a3
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
https://doi.org/10.1109/vlsitechnology18217.2020.9265018
Autor:
Hyunchul Sagong, Seungjin Choo, Jin-soak Kim, Minjung Jin, Yeshin Kim, Sungyoung Yoon, Seung Chul Shin, Changze Liu, Sangwoo Pae, Seung-Hyun Park, Ju-Seop Park, Hyeonwoo Nam, Hwa-Kyung Kim, Hyewon Shim, Junekyun Park
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report the extensive 14nm FinFET reliability characterization work and provide physical mechanisms and geometry dependencies. BTI, HCI variability related to #of Fin used in design along with self-heat considerations are critical for product desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db222c11cb9a817ac51c35177685375c
https://doi.org/10.1109/iedm.2015.7409744
https://doi.org/10.1109/iedm.2015.7409744
Autor:
Sungmock Ha, Jongwoo Park, Hye-Jin Kim, Hyun-Jin Kim, Jinju Kim, Yoohwan Kim, Lira Hwang, Seungjin Choo, Minjung Jin, Changze Liu, Soonyoung Lee, Hyun Chul Sagong, Junekyun Park, Jungin Kim, Sungyoung Yoon, Sangwoo Pae, Kangjung Kim, Hyeonwoo Nam
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Aging induced variability has been shaving away the design margins in advanced SRAM which may become more serious with highly scaled process node. This paper provides a systematical study of the BTI variation impacts in FinFET SRAM based on 14nm 128M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dee6b834292e8680c78abc22023b7d
https://doi.org/10.1109/iedm.2015.7409675
https://doi.org/10.1109/iedm.2015.7409675
Publikováno v:
Asian Test Symposium
As transistor geometry shrinks, the erroneous and spurious charge from a particle strike tends to be shared by multiple nodes and causes multiple nodes upset. Such SEU mechanism invalidates the hardening principle of protecting a single node in relat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f98fa3bff744fd5b24bda06dd9a883d
https://doi.org/10.1109/ats.2012.72
https://doi.org/10.1109/ats.2012.72
Publikováno v:
2011 International Reliability Physics Symposium.
Estimating operating lifetime is critical for dynamic random access memory (DRAM) components with hot-carrier injection (HCI). Using DC device lifetime to substitute a component lifetime can be too pessimistic and can disqualify good DRAM products. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1750aa2b8efe87866b5ad7db88ca7b57
https://doi.org/10.1109/irps.2011.5784457
https://doi.org/10.1109/irps.2011.5784457
Autor:
Hyeonwoo Nam
Publikováno v:
2006 International Conference on Hybrid Information Technology; 2006, p685-690, 6p