Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hyeonseung Ji"'
Publikováno v:
APL Materials, Vol 12, Iss 7, Pp 071121-071121-13 (2024)
The implementation of reservoir computing using resistive random-access memory as a physical reservoir has attracted attention due to its low training cost and high energy efficiency during parallel data processing. In this work, a NbOx/Al2O3-based m
Externí odkaz:
https://doaj.org/article/03fcdde42feb4460b59ae15a160db887
Autor:
Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111103-111103-12 (2023)
In this work, we compare the resistive switching characteristics between Ti/ZrOX/TiN and Ti/ZrOX/HfAlOX/TiN. The bilayer structure of the ZrOX-based device enables power consumption reduction owing to a lower forming voltage and compliance current. M
Externí odkaz:
https://doaj.org/article/a3aff3b0a17e40d89f14a8f4f327f22e
Autor:
Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim
Publikováno v:
APL Materials; Nov2023, Vol. 11 Issue 11, p1-12, 12p