Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Hyeongsu Choi"'
Autor:
Seungjin Lee, Seokyoon Shin, Giyul Ham, Juhyun Lee, Hyeongsu Choi, Hyunwoo Park, Hyeongtag Jeon
Publikováno v:
AIP Advances, Vol 7, Iss 4, Pp 045307-045307-7 (2017)
Tin disulfide (SnS2) has attracted much attention as a two-dimensional (2D) material. A high-quality, low-temperature process for producing 2D materials is required for future electronic devices. Here, we investigate tin disulfide (SnS2) layers depos
Externí odkaz:
https://doaj.org/article/23b170d29db943b0ad9cd8889542213c
Autor:
Juhyun Lee, Jeongsu Lee, Giyul Ham, Seokyoon Shin, Joohyun Park, Hyeongsu Choi, Seungjin Lee, Juyoung Kim, Onejae Sul, Seungbeck Lee, Hyeongtag Jeon
Publikováno v:
AIP Advances, Vol 7, Iss 2, Pp 025311-025311-6 (2017)
We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a
Externí odkaz:
https://doaj.org/article/fb17744620934694a2db29097c57153c
Autor:
Hyeongsu Choi, Namgue Lee, Hyunwoo Park, Yeonsik Choi, Keunsik Kim, Yeongtae Choi, Jongwoo Kim, Seokhwi Song, Hyunwoo Yuk, Hyeongtag Jeon
Publikováno v:
Applied Sciences, Vol 9, Iss 21, p 4606 (2019)
Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics of SnS is needed. Thus, we developed a new film process using ato
Externí odkaz:
https://doaj.org/article/ccfee2b9f88e4154af8d17a6c55336ee
Autor:
Haewon Cho, Namgue Lee, Hyeongsu Choi, Hyunwoo Park, Chanwon Jung, Seokhwi Song, Hyunwoo Yuk, Youngjoon Kim, Jong-Woo Kim, Keunsik Kim, Youngtae Choi, Suhyeon Park, Yurim Kwon, Hyeongtag Jeon
Publikováno v:
Applied Sciences, Vol 9, Iss 17, p 3531 (2019)
Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200−500 °C, yielding approximately 0.38 Å/cycle, and
Externí odkaz:
https://doaj.org/article/3cf5dfe8f0cc47b499fcf17af25fb8d4
Autor:
Jung Hoon Lee, Yeongtae Choi, Yeonsik Choi, Seokhwi Song, Jongwoo Kim, Hyeongsu Choi, Keunsik Kim, Namgue Lee, Hyeongtag Jeon, Chanwon Jung, Hyunwoo Park
Publikováno v:
Ceramics International. 46:12782-12787
We used atomic layer deposition (ALD) to evaluate the effect of single Al2O3 cycle insertion at various locations on SnO2 and Al-doped SnO2 thin film transistors (TFTs). The ALD process was used to deposit the SnO2 thin film in 67 cycles (5 nm thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5079ddae14aa9227573a6ad0cbac2347
https://doi.org/10.1016/j.ceramint.2020.02.047
https://doi.org/10.1016/j.ceramint.2020.02.047
Autor:
Youngjoon Kim, Hyeongsu Choi, Seokhwi Song, Hyunwoo Park, Hyungtak Seo, Hyunwoo Yuk, Keunsik Kim, Hyeongtag Jeon, Changhee Shin, Namgue Lee, Youngtae Choi, Jongwoo Kim, Chanwon Jung
Publikováno v:
Journal of Ceramic Processing Research. 20:484-489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aae3e966f29c9a6b12df0e03012f7df9
https://doi.org/10.36410/jcpr.2019.20.5.484
https://doi.org/10.36410/jcpr.2019.20.5.484
Autor:
Namgue, Lee, Hyeongsu, Choi, Hyunwoo, Park, Yeonsik, Choi, Hyunwoo, Yuk, JungHoon, Lee, Sung Gwon, Lee, Eun Jong, Lee, Hyeongtag, Jeon
Publikováno v:
Nanotechnology. 31(35)
Tin disulfide (SnS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1c05232b8b16a71896a7247e741ad8fb
https://pubmed.ncbi.nlm.nih.gov/32403092
https://pubmed.ncbi.nlm.nih.gov/32403092
Autor:
Namgue, Lee, Hyeongsu, Choi, Hyunwoo, Park, Yeonsik, Choi, Hyunwoo, Yuk, JungHoon, Lee, Hyeongtag, Jeon
Publikováno v:
Nanotechnology. 31(26)
Despite increasing interest in tin disulfide (SnS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a4a51d2cfd9271850d5b0eb1291fa2f5
https://pubmed.ncbi.nlm.nih.gov/32176869
https://pubmed.ncbi.nlm.nih.gov/32176869
Autor:
Minwook Bang, Hyunwoo Park, Hyeongsu Choi, Sung Gwon Lee, Namgue Lee, Eun Jong Lee, Hyeongtag Jeon
Publikováno v:
Thin Solid Films. 732:138779
Tin monosulfide (SnS) is a promising absorber layer material in solar cell devices. In addition to its outstanding electrical and optical properties, SnS does not contain rare heavy-metal atoms. Thus, many researchers have focused on fabricating high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de97b5e2939146c3372e66efd64f0486
https://doi.org/10.1016/j.tsf.2021.138779
https://doi.org/10.1016/j.tsf.2021.138779
Autor:
Seokhwi Song, Keunsik Kim, Youngtae Choi, Haewon Cho, Hyeongtag Jeon, Jongwoo Kim, Namgue Lee, Chanwon Jung, Youngjoon Kim, Hyunwoo Park, Yurim Kwon, Hyunwoo Yuk, Hyeongsu Choi, Suhyeon Park
Publikováno v:
Applied Sciences
Volume 9
Issue 17
Applied Sciences, Vol 9, Iss 17, p 3531 (2019)
Volume 9
Issue 17
Applied Sciences, Vol 9, Iss 17, p 3531 (2019)
Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200&ndash
500 °
C, yielding approximately 0
500 °
C, yielding approximately 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea6a646359d5a21653abce21fc8946ab