Zobrazeno 1 - 10 of 14 pro vyhledávání: '"Hyeongmin Cho"'
1
Akademický článek
Data Quality Measures and Efficient Evaluation Algorithms for Large-Scale High-Dimensional Data
Autor: Hyeongmin Cho, Sangkyun Lee
Publikováno v: Applied Sciences, Vol 11, Iss 2, p 472 (2021)
Machine learning has been proven to be effective in various application areas, such as object and speech recognition on mobile systems. Since a critical key to machine learning success is the availability of large training data, many datasets are bei
Externí odkaz: https://doaj.org/article/146b2f0fc291454d855b9874f93be369
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3
Critical role of terminating layer in formation of 2DEG state at the $LaInO_{3}$/$BaSnO_{3}$ interface
Autor: Seonghyeon Kim, Mikk Lippmaa, Jaehyeok Lee, Hyeongmin Cho, Juhan Kim, Bongju Kim, Kookrin Char
Based on the interface polarization model, the two-dimensional electron gas (2DEG) at $LaInO_{3}$(LIO)/$BaSnO_{3}$(BSO) interfaces is understood to originate from a polarization discontinuity at the interface and the conduction band offset between LI
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59ee49590cdf20d95599db0580a7163b
http://arxiv.org/abs/2208.02978
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6
Low resistance epitaxial edge contacts to buried nanometer thick conductive layers of BaSnO3
Autor: Jaehyeok Lee, Hyeongmin Cho, Bongju Kim, Myoungho Jeong, Kiyoung Lee, Kookrin Char
Publikováno v: Applied Physics Letters. 121:142102
As the size of the semiconductor device decreases, the importance of the low resistance contacts to devices cannot be overstated. Here, we studied the contact resistance to buried nanometer thick δ-doped Ba1-xLaxSnO3 (BLSO) layers. We have used epit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::29a73db90c1d870f7515fbc0034f6e05
https://doi.org/10.1063/5.0116527
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7
Akademický článek
HAETAE: Shorter Lattice-Based Fiat-Shamir Signatures
Autor: Jung Hee Cheon, Hyeongmin Choe, Julien Devevey, Tim Güneysu, Dongyeon Hong, Markus Krausz, Georg Land, Marc Möller, Damien Stehlé, MinJune Yi
Publikováno v: Transactions on Cryptographic Hardware and Embedded Systems, Vol 2024, Iss 3 (2024)
We present HAETAE (Hyperball bimodAl modulE rejecTion signAture schemE), a new lattice-based signature scheme. Like the NIST-selected Dilithium signature scheme, HAETAE is based on the Fiat-Shamir with Aborts paradigm, but our design choices target a
Externí odkaz: https://doaj.org/article/00edd78ef6ed4367969166f49ba7861d
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9
Akademický článek
High-Mobility Field-Effect Transistor Using 2-Dimensional Electron Gas at the LaScO3/BaSnO3 Interface.
Autor: Hyeongmin Cho, Dowon Song, Youjung Kim, Bongju Kim, Kookrin Char
Publikováno v: ACS Applied Electronic Materials; 1/25/2022, Vol. 4 Issue 1, p356-366, 11p
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10
Fermi level pinning and band bending in δ-doped BaSnO3
Autor: Hyeongmin Cho, Kookrin Char, Youjung Kim
Publikováno v: Applied Physics Letters. 118:052101
Various δ-doped semiconductor heterostructures have been effectively used for devices at room temperature and for quantum phenomena at low temperatures. Here, we use BaSnO3 and investigate its δ-doped system, focusing on its band bending and surfac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd2eefc7d770107566f9033f5dcaacb3
https://doi.org/10.1063/5.0042515
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