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pro vyhledávání: '"Hyeongkwon Kim"'
Autor:
Hyeongkwon Kim, Jaeyong Lee, John A. Eliades, Jaekwon Suk, Weon Cheol Lim, Joonkon Kim, Jonghan Song, Hye Yeon Kim
Publikováno v:
Journal of the Korean Physical Society. 73:661-666
Si ions 2.3 MeV are implanted into nanodiamonds (NDs) at doses of 1×1012 ~ 1×1015 ions/cm2. The ion implantation not only creates silicon-vacancy (SiV) color centers but also reduces the size of the NDs from 50 nm to ~ 10 nm. As the Si dose is incr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce67c805c882030900232eaad25f020c
https://doi.org/10.3938/jkps.73.661
https://doi.org/10.3938/jkps.73.661
Autor:
Jong-Lam Lee, Hyeongkwon Kim, Joon Seop Kwak, Sam Kyu Noh, Heuk Park, Hong-Koo Baik, Hong Man Kim
Publikováno v:
Applied Physics Letters. 67:2465-2467
Thermally stable, low‐resistance PdGe‐based ohmic contacts to high–low doped n‐GaAs have been developed. The lowest contact resistance obtained is two times lower than that of previously reported PdGe ohmic contacts. The contacts are thermall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52ba40bdeee945c8c1e2928abb250452
https://doi.org/10.1063/1.114609
https://doi.org/10.1063/1.114609