Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hyeong-keun Lee"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-9 (2023)
Abstract Top gate a-InGaZnO (IGZO) thin-film transistors (TFTs) annealed at high temperature show excellent initial current–voltage (I–V) characteristics. However, when they are exposed to positive gate bias for a long time, hump can occur in the
Externí odkaz:
https://doaj.org/article/02b12d09b31e4f6f9b380c19d111ca0d
Publikováno v:
Journal of Environmental Science International. 27:983-989
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700e48f0467dacec95c185047f11a8c5
https://doi.org/10.5322/jesi.2018.27.11.983
https://doi.org/10.5322/jesi.2018.27.11.983