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pro vyhledávání: '"Hyeong-Chan Son"'
Autor:
Hyeong-Chan Son, Hyunwoo Kim
Publikováno v:
IEEE Access, Vol 12, Pp 145393-145399 (2024)
In this study, single-event transient (SET) characteristics in tunneling-based ternary complementary MOS device (T-CMOS) with gate-all-around structure (i.e., nanosheet FET) were analyzed for the first time. For low power computing systems, the trans
Externí odkaz:
https://doaj.org/article/11fb6963d4c64a0a989683d2ae32b1e7
