Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hyeon-Kyun Noh"'
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015)
Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for t
Externí odkaz:
https://doaj.org/article/1bdd9e6411564a2e9276f02ca4600482
Autor:
QHwan Kim, Sunghee Lee, Ami Ma, Jaeyoon Kim, Hyeon-Kyun Noh, Kyu Baik Chang, Wooyoung Cheon, Shinwook Yi, Jaehoon Jeong, BongSeok Kim, Young-Seok Kim, Dae Sin Kim
Publikováno v:
Solid-State Electronics. 201:108568
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16683d5213b40f19685c5429bc61c8af
https://doi.org/10.1016/j.sse.2022.108568
https://doi.org/10.1016/j.sse.2022.108568
Autor:
Youngkyu Shin, Dong-Won Kim, Sangwon Baek, Jae-hoon Jeong, Myung-Gil Kang, Kwangseok Lee, Keun Hwi Cho, K. J. Chang, Hyeon-Kyun Noh, Daesin Kim, Seung-ju Kim
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we propose a machine learning framework for predicting performances of semiconductor devices that can automatically reflect modifications in process conditions. While standard TCAD simulators require intensive modeling and calibration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::235237f691c9e0345b09559e2dcc379a
https://doi.org/10.23919/sispad49475.2020.9241681
https://doi.org/10.23919/sispad49475.2020.9241681
Autor:
Shigenobu Maeda, Mirco Cantoro, Hyeon-Kyun Noh, Krishna Kumar Bhuwalka, Zhenhua Wu, Uihui Kwon, Seonghoon Jin, Keun-Ho Lee, Yeon-Cheol Heo, Woosung Choi, Won-Sok Lee, Young-Kwan Park
Publikováno v:
IEEE Transactions on Electron Devices. 62:2816-2823
III–V n-channel MOSFETs based on In x Ga1− x As are evaluated for low-power (LP) technology at a sub-10-nm technology node. Aggressive design rules are followed, while industry-relevant FinFET architecture is selected. We show, for the first time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e35921f96f53dd145886566d23a9ea02
https://doi.org/10.1109/ted.2015.2445977
https://doi.org/10.1109/ted.2015.2445977
Autor:
Ho-Soo Kim, Sung Jin Jung, Hyunjung Cho, Hyeon-Kyun Noh, Sang-Hyup Kim, Wang-Jik Kim, Derk-Moon Kim
Publikováno v:
Journal of the architectural institute of Korea planning & design. 30:139-146
Multi-roofed historic wooden building 'connection' and 'special proportion' of the load according to the delivery system may be different. Layer and the layer again, and that there is a special proportional single layer than building Multi-roofed his
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb24deeeb7aa2adb44a43a67c3dd8414
https://doi.org/10.5659/jaik_pd.2014.30.3.139
https://doi.org/10.5659/jaik_pd.2014.30.3.139
Autor:
Changwook Jeong, Anh-Tuan Pham, Sae-jin Kim, Jongchol Kim, Uihui Kwon, S. Dhar, H. W. Kim, Hyeon-Kyun Noh, S. Maeda, Won-Seong Lee, Seonghoon Jin, Woosung Choi, Krishna Kumar Bhuwalka, Zhenhua Wu, Kwangseok Lee
Publikováno v:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The feasibility of medium-high fraction SiGe based FinFET pMOS devices for a sub-10nm CMOS logic technology from a performance (I EFF @ fixed I OFF ) standpoint is evaluated, considering three key device aspects — stress, band-to-band-tunneling (BT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d37575d95c4d6f75612b307cd6aa89b
https://doi.org/10.1109/sispad.2016.7605217
https://doi.org/10.1109/sispad.2016.7605217
Publikováno v:
Physica B: Condensed Matter. 407:2907-2910
We perform first-principles density functional calculations to study the electronic structure of Ni/HfO 2 and Ni/SiO 2 interfaces and the effect of O-vacancy (V O ) defects on the Schottky barrier height and the effective work function. We generate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c6311ac05cb4db6b23d26a6fcda5a5
https://doi.org/10.1016/j.physb.2011.08.079
https://doi.org/10.1016/j.physb.2011.08.079
Publikováno v:
Physica B: Condensed Matter. 407:2989-2992
We investigate the stability of boron dopants near the interface between crystalline Si and amorphous SiO2 through first-principles density functional calculations. An interstitial B is found to be more stable in amorphous SiO2 than in Si, so that B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e64e8fff1203f1fe24a7d5352d9f750
https://doi.org/10.1016/j.physb.2011.08.050
https://doi.org/10.1016/j.physb.2011.08.050
Publikováno v:
Microelectronic Engineering. 89:120-123
We perform first-principles density functional calculations to investigate the stability of various B-related defects near Si/SiO"2 interface, and propose a mechanism for boron segregation to the interface. In Si, a substitutional B is energetically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b3360257414b5cb129f61887a28a67
https://doi.org/10.1016/j.mee.2011.04.036
https://doi.org/10.1016/j.mee.2011.04.036
Publikováno v:
Science and Technology of Advanced Materials
Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015)
Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015)
Oxygen vacancies have been considered as the origin of threshold voltage instability under negative bias illumination stress in amorphous oxide thin film transistors. Here we report the results of first-principles molecular dynamics simulations for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c81f70ca575dde797300ffdc83f354d8
https://pubmed.ncbi.nlm.nih.gov/27877799
https://pubmed.ncbi.nlm.nih.gov/27877799