Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hyeon-Bhin Jo"'
Autor:
Hyeon-Seok Jeong, Wan-Soo Park, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung-Ho Hahm, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 387-396 (2022)
This paper presents a physics-based analytical channel charge model for indium-rich InxGa1-xAs/In0.52Al0.48As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion regimes. The model requires o
Externí odkaz:
https://doaj.org/article/dc6ba75799cc45bea3393de3a8a5a735
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 209-214 (2021)
We investigated the impact of a sulfur passivation (S-passivation) process step on carrier transport properties of surface-channel In0.7Ga0.3As quantum-well (QW) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) with source/drain (S/D) reg
Externí odkaz:
https://doaj.org/article/8cea47dd5f99471b870fdbdb21eac9ed
Autor:
Hyeon-Bhin Jo, Jung-Ho Park, Seung-Woo Son, Ji-Min Baek, Do-Young Yun, Yeonsung Kang, Yong-Hyun Seo, Lee Min Yung, Jung-Hee Lee, Tae-Woo Kim, Dae-Hyun Kim
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075203-075203-7 (2018)
In this paper, we aim to decompose gate capacitance components in InGaAs/InAlAs quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs), in an effort to physically investigate their gate capacitance (Cg). First, we verified the
Externí odkaz:
https://doaj.org/article/7e699cc5761d4890954ee2193e07588f
Sub-50 nm Terahertz In0.8Ga0.2As Quantum-Well High-Electron-Mobility Transistors for 6G Applications
Autor:
Wan-Soo Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, Ji-Hoon Yoo, Hyeon-Seok Jeong, Sethu George, Ji-Min Baek, In-Geun Lee, Tae-Woo Kim, Sang-Kuk Kim, Jacob Yun, Ted Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2081-2089
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92028ed3cc46a75742714c4affe8727
https://doi.org/10.1109/ted.2022.3231576
https://doi.org/10.1109/ted.2022.3231576
Autor:
Hyo-Jin Kim, Ji-Hoon Yoo, Wan-Soo Park, Seung-Won Yun, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Electron Device Letters. 44:229-232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdd1615ca7d232edd0c820da12f5e8c2
https://doi.org/10.1109/led.2022.3230966
https://doi.org/10.1109/led.2022.3230966
Autor:
Hyo-Jin Kim, In-Geun Lee, Hyeon-Bhin Jo, Tae-Beom Rho, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Tae-Woo Kim, Dae-Hyun Kim
Publikováno v:
Electronics; Volume 12; Issue 2; Pages: 259
In this study, we investigated the impact of intrinsic output conductance (goi) on the short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, we attempted to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb3e2ab95e94c9c5e599d743c682e329
Autor:
Hyeon-Bhin Jo, Dae-Hyun Kim
Publikováno v:
JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY. 30:436-440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7670c5675ac231902a218fabb7cd5070
https://doi.org/10.46670/jsst.2021.30.6.436
https://doi.org/10.46670/jsst.2021.30.6.436
Autor:
Wan-Soo Park, Hyeon-Bhin Jo, Hyo-Jin Kim, Su-Min Choi, Ji-Hoon Yoo, Ji-Hun Kim, Hyeon-Seok Jeong, Sethu George, Ji-Min Beak, In-Geun Lee, Tae-Woo Kim, Sang-Kuk Kim, Jacob Yun, Ted Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4609f40097026eace29b8393ea010eba
https://doi.org/10.1109/iedm45625.2022.10019567
https://doi.org/10.1109/iedm45625.2022.10019567
Autor:
Su-Min Choi, Hyeon-Bhin Jo, Do-Young Yun, Jun-Gyu Kim, Wan-Soo Park, Ji-Min Baek, In-Geun Lee, Jang-Kyoo Shin, Hyuk-Min Kwon, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f84278c618756b3d94d070bc24a34a4
https://doi.org/10.1109/iedm45625.2022.10019358
https://doi.org/10.1109/iedm45625.2022.10019358
Autor:
In-Geun Lee, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, Sang-Kuk Kim, Jae-Gyu Kim, Jacob Yun, Ted Kim, Jung-Hee Lee, Chan-Soo Shin, Jae-Hak Lee, Kwang-Seok Seo, Dae-Hyun Kim
Publikováno v:
Electronics; Volume 11; Issue 17; Pages: 2744
In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated throu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::644b4ad6231ace0fbd2790ac70b8ae27