Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Hyeon Woo Park"'
Autor:
Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Jae Hoon Lee, Hani Kim, Hyeon Woo Park, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 5, Pp n/a-n/a (2023)
Abstract This work investigates the evolution of the ferroelectric (FE) performance of the sputtered aluminum scandium nitride (AlScN) thin film, which has a high remanent polarization (Pr, > 100 µC cm−2) and coercive field (Ec, > 6 MV cm−1), wi
Externí odkaz:
https://doaj.org/article/77e05821247b40d29ab7837383209f98
Autor:
Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Jung-Hae Choi, Kan-Hao Xue, Cheol Seong Hwang, Hangbing Lyu
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
HfO2-based ferroelectric films are attracting a great deal of attention. Here, the authors conclude that the performance degradation and the possible rejuvenation are ascribed to the reversible transition between polar and antipolar phases.
Externí odkaz:
https://doaj.org/article/a3c17d53ddd74e79bf13620108134c18
Publikováno v:
Nano Select, Vol 2, Iss 6, Pp 1187-1207 (2021)
Abstract The ferroelectric field‐effect transistor (FeFET) is one of the leading contenders to succeed charge‐trap‐based flash memory (CTF) devices in the current vertically‐integrated NAND flash storage market. The operation of a FeFET is ba
Externí odkaz:
https://doaj.org/article/67c056b976b84b12a066b42961af055a
Autor:
Baek Su Kim, Seung Dam Hyun, Taehwan Moon, Keum Do Kim, Young Hwan Lee, Hyeon Woo Park, Yong Bin Lee, Jangho Roh, Beom Yong Kim, Ho Hyun Kim, Min Hyuk Park, Cheol Seong Hwang
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-11 (2020)
Abstract The chemical, physical, and electrical properties of the atomic layer deposited Hf0.5Zr0.5O2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precu
Externí odkaz:
https://doaj.org/article/77cf457fd9bb4d67ba357b186fdefdd0
Autor:
Hyeon Woo Park, Won Byong Yoon
Publikováno v:
CyTA - Journal of Food, Vol 16, Iss 1, Pp 135-145 (2018)
The mouthfeel of mashed potato prepared with steamed purple flesh potato (SPFP) was investigated by measuring tribological and rheological characteristics. Mathematical models describing pre-processes such as drying and grinding associated with physi
Externí odkaz:
https://doaj.org/article/d69d578af0af4be6a966301e5da80d10
Autor:
Taehwan Moon, Hyun Jae Lee, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials, Vol 4, Iss 12, Pp n/a-n/a (2018)
Abstract The rectification of the Pt/amorphous Al2O3 (a‐AO)/Nb‐doped SrTiO3 (NSTO) structure with excellent applicability as a selector for crossbar array resistive switching random access memory is introduced. The maximum forward/reverse current
Externí odkaz:
https://doaj.org/article/2dd0d59d75a04740bcfcedfdb1f5aa0b
Autor:
Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang
Publikováno v:
APL Materials, Vol 5, Iss 4, Pp 042301-042301-7 (2017)
Time domain electric pulse measurements were conducted on a capacitor consisting of a Pt film as the top electrode, atomic-layer-deposited 6.5-nm-thick amorphous Al2O3 as the dielectric layer, and two-dimensional electron gas (2DEG) at the interface
Externí odkaz:
https://doaj.org/article/bcdac9517fd84d34818b75a26e9ccecc
Autor:
Shiyu Cai1, Hyeon Woo Park2, Jingzheng Feng1, Baker, Jakob1, Balasubramaniam, V. M.2,3, Snyder, Abigail B.1 abs276@cornell.edu
Publikováno v:
Food Protection Trends. May/Jun2024, Vol. 44 Issue 3, p152-159. 8p.
Publikováno v:
Sensors, Vol 22, Iss 17, p 6418 (2022)
We introduced a digital photo image analysis in color space to estimate the spectrum of fluor components dissolved in a liquid scintillator sample through the hue and wavelength relationship. Complementary metal oxide semiconductor (CMOS) image senso
Externí odkaz:
https://doaj.org/article/5ff2f4380fef47298e650723d0ded433
Publikováno v:
ISIJ International. 63:354-365
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15bc8b1883f8a404922701717e7c9ef2
https://doi.org/10.2355/isijinternational.isijint-2022-340
https://doi.org/10.2355/isijinternational.isijint-2022-340