Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Hyeon Jun Hwang"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique opportunities to overcome the limit of silicon‐based, complementary metal‐oxide‐
Externí odkaz:
https://doaj.org/article/4f4e13c0ea1d47a197012ef3e0d9ef46
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 1, Pp n/a-n/a (2024)
Abstract In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect transistor with an HZO dielectric device by using a pulsed IV measurement method. The dom
Externí odkaz:
https://doaj.org/article/2d2a08ac013f43dba2ec9ea1d23a3991
Autor:
Yongsu Lee, Heejin Kwon, Seung-Mo Kim, Ho-In Lee, Kiyung Kim, Hae-Won Lee, So-Young Kim, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Nano Convergence, Vol 10, Iss 1, Pp 1-9 (2023)
Abstract A p-type ternary logic device with a stack-channel structure is demonstrated using an organic p-type semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). A photolithography-based patterning process is developed to fabricate
Externí odkaz:
https://doaj.org/article/606aac6476ab47699952f522ebeed8dd
Autor:
Yongsu Lee, Seung-Mo Kim, Kiyung Kim, So-Young Kim, Ho-In Lee, Heejin Kwon, Hae-Won Lee, Chaeeun Kim, Surajit Some, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract P-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable thresho
Externí odkaz:
https://doaj.org/article/85faa7586f8b43eb9acc0a4ba44c7099
Publikováno v:
Nanomaterials, Vol 13, Iss 7, p 1203 (2023)
A reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without requiring complicated equipment has been experimentally investigated by modifying the Fermi level of large-area graphene u
Externí odkaz:
https://doaj.org/article/40b5f37da1ac490d85fed87803eb6dc2
Autor:
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 424-428 (2021)
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V char
Externí odkaz:
https://doaj.org/article/519aa93d04494911ab18c5356ffa3035
Autor:
Min Gyu Kwon, Cihyun Kim, Kyoung Eun Chang, Tae Jin Yoo, So-Young Kim, Hyeon Jun Hwang, Sanghan Lee, Byoung Hun Lee
Publikováno v:
APL Photonics, Vol 7, Iss 2, Pp 026101-026101-7 (2022)
In this paper, we improved the performance of a near-infrared graphene/germanium heterojunction photodetector at atmospheric pressure and at room temperature. We applied graphene with p-type chemical doping (doping chemical: polyacrylic acid) to lowe
Externí odkaz:
https://doaj.org/article/68a9562f2bb249b484ad19fba17abf3a
Autor:
Soo Cheol Kang, So Young Kim, Sang Kyung Lee, Kiyung Kim, Billal Allouche, Hyeon Jun Hwang, Byoung Hun Lee
Publikováno v:
Nanomaterials, Vol 10, Iss 6, p 1186 (2020)
The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The energy level of the oxygen vacancies was found to be located near the conduction band of Zn
Externí odkaz:
https://doaj.org/article/aa707325e2a841a88c3191664614b8df
Publikováno v:
AIP Advances, Vol 8, Iss 10, Pp 105326-105326-6 (2018)
Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10m
Externí odkaz:
https://doaj.org/article/5e6dd3d086354739b45741d5d1bb5009
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015022-015022-6 (2018)
Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process with a maximum process temperature below 200 °C. An on/off ratio of over 104 is obtained
Externí odkaz:
https://doaj.org/article/c3955a96f87a49198a5f34081cb1d5cf