Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hyeon Joo Seul"'
Publikováno v:
SID Symposium Digest of Technical Papers. 52:206-209
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3250caceac87e0d0e96e8b8854ae352c
https://doi.org/10.1002/sdtp.15067
https://doi.org/10.1002/sdtp.15067
Autor:
Woo Bin Song, Min Jae Kim, Hyun Ji Yang, Jae Kyeong Jeong, Min Hoe Cho, Min Hee Cho, Hyeon Joo Seul
Publikováno v:
ACS Applied Materials & Interfaces. 12:33887-33898
Low-temperature (≤400 °C), stackable oxide semiconductors are promising as an upper transistor ingredient for monolithic three-dimensional integration. The atomic layer deposition (ALD) route provides a low-defect, high-quality semiconducting oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::337c15d103020a91548b6ea01b11cb49
https://doi.org/10.1021/acsami.0c06382
https://doi.org/10.1021/acsami.0c06382
Publikováno v:
Proceedings of the International Display Workshops. :1051
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a9d754e592787fd184edf1fafed2d6
https://doi.org/10.36463/idw.2022.1051
https://doi.org/10.36463/idw.2022.1051
Publikováno v:
ACS applied materialsinterfaces. 13(14)
Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile fabrication of indium-gallium zinc oxide (IGZO) thin-film transi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4eb8eca021a054aa8af989711f7a9485
https://pubmed.ncbi.nlm.nih.gov/33793185
https://pubmed.ncbi.nlm.nih.gov/33793185
Publikováno v:
Advanced Display Technology ISBN: 9789813365810
Since the invention of IGZO by Prof. Hosono in 2004, the development of IGZO thin-film transistors has been accelerated by material optimization including cation composition, processing conditions, and careful architecture design such as a self-align
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2725486ca1c57ea43a1470ab20cf85
https://doi.org/10.1007/978-981-33-6582-7_7
https://doi.org/10.1007/978-981-33-6582-7_7
Autor:
Hyeon Joo Seul, Jae Hoon Cho, Jae Seok Hur, Min Hoe Cho, Min Hee Cho, Min Tae Ryu, Jae Kyeong Jeong
Publikováno v:
Journal of Alloys and Compounds. 903:163876
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a9aed29450ac611fe6238c6b0c2238
https://doi.org/10.1016/j.jallcom.2022.163876
https://doi.org/10.1016/j.jallcom.2022.163876
Autor:
Hyeon Joo Seul, Min Hoe Cho, Hyun Ji Yang, Min Jae Kim, Hyun Cheol Cho, Yun-Heub Song, Yerin Kim, Jae Kyeong Jeong, Hoichang Yang
Publikováno v:
ACS applied materialsinterfaces. 12(47)
The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In1-xGaxO) films as high-mobility n-channel semiconducting layers was investigated. Different Ga concentrations in 10-13 nm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a963d08ccbe880769c7e7eae363420b1
https://pubmed.ncbi.nlm.nih.gov/33172258
https://pubmed.ncbi.nlm.nih.gov/33172258
Publikováno v:
Journal of Materials Chemistry C. 4:10486-10493
A facile route for the preparation of a solution-processed silicon oxide dielectric from perhydropolysilazane (PHPS) at a low temperature (≤150 °C) is proposed. Deep ultraviolet (DUV) irradiation on the PHPS-derived silicon oxide film, where the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45279deabab2cfb5d41a28636601c414
https://doi.org/10.1039/c6tc03725a
https://doi.org/10.1039/c6tc03725a
Publikováno v:
SID Symposium Digest of Technical Papers; Aug2021 Supplement S1, Vol. 52, p206-209, 4p
Publikováno v:
Journal of Materials Chemistry C; 11/28/2016, Vol. 4 Issue 44, p10405-10410, 6p